Photoluminescence properties of Mg-doped InN nanowires

Zhao, Songrui; Liu, Xuedong; Mi, Zetian

doi:10.1063/1.4831895

Cited by 17 publications

(18 citation statements)

References 38 publications

(52 reference statements)

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Section: Mg-dopant Incorporationmentioning

confidence: 71%

“…This is in contrast to I PL H , which rises slower at low excitations and faster at high excitations, with no sign of saturation. This difference is attributed to the redistribution of hole population in the Mg-acceptor energy levels and valence band [71,72]. Moreover, as illustrated in Figure 3c, at low excitations both E PL L (in red triangles) and E PL H (in blue circles) exhibit a blue-shift of 12 meV and 7 meV, respectively, and then stay nearly constant at high excitations.…”

Section: Mg-dopant Incorporationmentioning

confidence: 88%

“…The incorporation of Mg dopants is confirmed by photoluminescence experiments. Figure 3a shows the power-dependent photoluminescence spectra measured from Mg-doped InN nanowires with a Mg cell temperature of 190 °C (Mg flux is around 1 × 10 −11 Torr) [71]. It is seen that besides the near band edge emission peak around 0.67 eV, another low-energy peak around 0.61 eV is measured (e.g., under an excitation power of 9 mW).…”

Section: Mg-dopant Incorporationmentioning

confidence: 99%

“…The growth direction is along c-axis, marked by the arrow. Detailed high-resolution TEM studies further suggest that such nanowires are free of stacking faults and misfit dislocations [43,71]. Besides the excellent control of the nanowire formation site and size uniformity, using selective area epitaxy can lead to nearly defect-free, quasi-epilayer template with arbitrary alloy composition, through a controlled coalescence process.…”

Section: Mg-dopant Incorporationmentioning

confidence: 99%

“…At elevated growth temperatures, the In seeding layer turns into In droplets, which can enhance the formation of Mg-doped InN nanowires. The typical growth parameters include a nitrogen flow rate of 1 sccm, a nitrogen plasma power of 350 W, an In flux of 6 × 10 −8 Torr, and a substrate temperature of 480 • C. Mg fluxes are in the range of~1 × 10 −11 to 3 × 10 −10 Torr [43,71]. Figure 2a shows the SEM image of Mg-doped InN nanowires.…”

Section: Mg-dopant Incorporationmentioning

confidence: 99%

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Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Zhao

2017

Crystals

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p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown p-type InN and AlN-two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV) optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

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Section: Mg-dopant Incorporationmentioning

confidence: 71%

Section: Mg-dopant Incorporationmentioning

confidence: 88%

Section: Mg-dopant Incorporationmentioning

confidence: 99%

Section: Mg-dopant Incorporationmentioning

confidence: 99%

Section: Mg-dopant Incorporationmentioning

confidence: 99%

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Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Zhao

2017

Crystals

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Ultrastrong Terahertz Emission from InN Nanopyramids on Single Crystal ZnO Substrates

Liu

Chen

Chu

et al. 2017

Advanced Optical Materials

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The creation of high efficiency and room temperature terahertz (THz) emitters has long been expected in both scientific and industrial communities. Despite the recent progress in THz source such as quantum cascade lasers, high efficiency THz emitters capable of operating at room temperature are still elusive. Indium nitride (InN), a narrow bandgap semiconductor, has emerged as a promising THz emitter due to its unique electronic properties. However, the efficiency of InN THz emitters reported up to now is still far from theoretically predicted because of inadequately engineered electrical conduction and radiative coupling. In this study, the authors report a novel, high performance THz emitting structure consisting of nanoengineered InN micro/nanopyramid arrays on a single crystal zinc oxide (ZnO) substrate. With improved electronic conduction from Zn diffusion induced doping and enhanced radiation coupling benefiting from uniquely structured geometry, the InN nanopyramids yielded THz emission intensity is close to an order of magnitude stronger than that of p‐type indium arsenide (InAs). These findings prove that InN is a promising THz material and of wide importance in material science, optical engineering sectors, etc.

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Extending group‐III nitrides to the infrared: Recent advances in InN

Zhao

2015

Physica Status Solidi (b)

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In this article, we provide an overview on the recent advances made in InN, including both planar and nanowire structures. With the improved epitaxial growth process, the background electron concentration can be reduced to low 1017 and 1013 cm−3 ranges in planar and nanowire structures, respectively, with the latter approaching the intrinsic limit of InN at room temperature. Extensive studies have shown that the measurement of p‐type conduction in InN epilayers has been fundamentally limited by the presence of electron accumulation on the c‐plane surfaces. In contrast, the nonpolar grown surfaces of InN are found to be completely free of electron accumulation. Moreover, through direct Mg dopant incorporation, the surfaces (nonpolar m‐plane) of InN nanowires can be transformed from intrinsic to nearly p‐type degenerate, which has led to the first direct measurement of p‐type conduction in InN.

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Photoluminescence properties of Mg-doped InN nanowires

Cited by 17 publications

References 38 publications

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Ultrastrong Terahertz Emission from InN Nanopyramids on Single Crystal ZnO Substrates

Extending group‐III nitrides to the infrared: Recent advances in InN

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