Photoluminescence properties of midinfrared dilute nitride InAsN epilayers with/without Sb flux during molecular beam epitaxial growth

Abstract

We report on the comparative studies of photoluminescence ͑PL͒ properties of molecular beam epitaxy grown dilute InAsN epilayers with and without antimony ͑Sb͒ flux during the growth. Both samples exhibit strong midinfrared ͑MIR͒ emission at room temperature, while the sample with Sb flux has much higher intensity. At low temperatures, these samples exhibit totally different PL features in terms of line width, peak position, intensity, and their dependences on temperature and excitation density. Our results clearly indicate that part of Sb atoms serve as a surfactant that effectively improves the optical quality of MIR dilute nitrides.

Sb antisite defects in InSb epilayers prepared by metalorganic chemical vapor deposition

“…2. It is seen that the main the emission peak has a blue shift first and then a red shift when the temperature increases from 10 to 270 K. This could be explained by the existence of the localization of excitons in the epilayer at low temperatures, as suggested by Chen et al [25]. However, for the peak at 0.211 eV, the position remains basically unchanged with the increased temperature, as indicated by the arrow in the figure.…”

Optical properties and bonding behaviors of InSbN alloys grown by metal-organic chemical vapor deposition

“…It can be seen that the curve is well matched with the fitting curve of Varshni's equation above 60 K. However, when the measurement temperature decreases below 60 K, the emission peak turns to lower energy. The non-Varshni behavior has also been observed in several nitride materials, such as InGaAsN [16,17], GaN [18], and InAsN [19,20] and has been attributed to the localized states in the lower conduction band. It should be pointed out that similar observation has also been acquired in MOCVD grown InSb layers with Sb antisite defects [15].…”

Simulations of mid infrared emission of InAsN semiconductors

“…For dilute nitride ‫ݏܣ݊ܫ‬ ଵି௫ ܰ ௫ , the following values can be taken for the parameters ܸ = 2.0ܸ݁ [3] and the position of the Nitrogen impurity, ‫ܧ‬ ே = 1.44ܸ݁ [26][27]. The temperature dependent band gap of the host matrix (InAs) follows the Varshni formula [28][29][30];…”