Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

Dhlamini, M.S.; Terblans, J.J.; Ntwaeaborwa, O.M.; Ngaruiya, James M.; Hillie, K.T.; Botha, J.R.; Swart, H.C.

doi:10.1016/j.jlumin.2008.06.016

Cited by 24 publications

(11 citation statements)

References 25 publications

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“…Several synthesis techniques such as microemulsion [11], chemical bath deposition (CBD) [12], sol-gel [13], solvothermal process [14] and sonochemical method [15] have been used to synthesize undoped PbS nanocrystal structures. The PbS nanoparticles embedded in an amorphous silica (SiO 2 ) host were also investigated [16]. Doping with optically active luminescent materials controls the band structure of the nanocrystal structures and shows intense emissions in a wide range of wavelength depending on the impurity type, concentration and crystal dimensions and also play key roles in luminescence efficiency.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of PbS nanowires doped with Tb3+ ions by using chemical bath deposition method

2019

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Crystalline lead sulfide (PbS) nanowires doped with terbium (Tb 3+) ions were synthesized by the chemical bath deposition method at room temperature. The powder was obtained from an aqueous solutions using lead acetate dehydrate, terbium nitrate, thiourea, potassium hydroxide and ammonia. The terbium molar concentrations were varied in the deposition process to investigate the effect on the structural, optical, morphological and luminescent properties of PbS nanowires. The crystalline size was found to be dependent on the concentration of the Tb 3+ ions used. The estimated average crystalline sizes were calculated from the X-ray diffraction and found to be 34, 33 and 37 nm for PbS: 0% Tb 3+ , PbS: 0.2% Tb 3+ and PbS: 0.5% Tb 3+ , respectively. The scanning electron microscopy micrographs depict nanowire shape for the undoped as well as Tb-doped samples. The energy-dispersive X-ray and Auger electron spectroscopy analyses confirmed the presence of all the expected elements. The solid powder nanowires exhibited high absorptions in the UV-Vis regions. The band gap energies were estimated in the range of 1.99-2.46 eV. The absorption edge and the band gap energies of these PbS nanowires have shifted depending on the concentration of the dopant. The maximum luminescence intensity was obtained for PbS: 0.2% Tb 3+ ions and luminescent quenching was observed for higher terbium concentrations.

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Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of PbS nanowires doped with Tb3+ ions by using chemical bath deposition method

2019

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“…As evident from figure 4, the emission spectra show a broad peak at 693 nm for all films due to the interband transitions of PbS. It has been reported in the literature that PbS is weakly luminescent at room temperature [11]. However, the low emission peak at 693 nm (red region) is shifting from the infrared region of bulk value 3200 nm [12].…”

Section: Optical Propertiesmentioning

confidence: 56%

“…M. S. Dhlanini et. al [11] reported similar broad peak at ∼560 nm, which correspond to PbS nanoparticles embedded in SiO 2 matrix. As evident from the photoluminescence spectra, the emission spectra of our sample is highly asymmetric with a tail towards longer wavelength.…”

Section: Optical Propertiesmentioning

confidence: 75%

Photoluminescence studies of chemically bath deposited nanocrystalline lead sulphide (PbS) thin films

Singh¹,

Singh²,

London³

et al. 2012

AIP Conference Proceedings

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“…We first verified that thermal treatments did not affect the Pb(Th)S:O absorbing layer properties due to heat induced grain growth or oxidation. [41] This hypothesis is strengthened by lateral JV measurements showing similar posttreatment increased film conductance independent of the treatment atmosphere and duration ( Figure 2c). As can be observed, the transmission spectra and the peak emission wavelength (1.55 µm) remain unchanged under all treatment conditions.…”

Section: Wwwadvmatinterfacesdementioning

confidence: 65%

Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions

Maman

Templeman

Manis-Levi

et al. 2018

Adv Materials Inter

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widespread use in solar cells and microelectronic devices. [1][2][3][4][5] In solar cells, the incorporation of the thin insulating layer enables reduction of leakage currents leading to overall improved efficiency. Certain electronic components, such as MIS diodes, depend on the insulator properties, which, if tuned properly, will perform current multiplication, thus acting as electronic switches. [6,7] A common application of MIS and SIS junctions is in electromagnetic radiation detection, [1] where excited charge carriers, driven by the depletion layer's electric field, tunnel through a thin insulating layer. To date, MIS and SIS junctions were incorporated as electromagnetic radiation detectors for the ultraviolet (UV), visible, and infrared (IR) spectral regions, where the wavelength sensitivity is determined by the choice of metal (work function) and the semiconductor (bandgap) materials. As examples, UV MIS detectors were presented using Si/SiO 2 core-shell particles, [8] and visible blind IR detectors were constructed using multilayers of SiO 2 /TiO 2 in a MIS structure. [9] In order to push the detection limits into the short wavelength infrared (SWIR) spectral band (1.3-1.5 um), Yu et al. combined Ge based detectors with insulators using low temperature diffusion processing. [10] Other devices where amorphous insulating layers play an important role are thin film transistors. Amorphous oxides have many advantages including high optical transparency, high electron mobility, and homogeneous microstructure with no grain boundaries. [11] The device structure and material properties, e.g., metal work function, insulator thickness/composition, and semiconductor type/doping level, all play crucial roles in determining device electrical properties and efficiency.The most common insulating materials in such devices are oxides of the semiconductor layer. To form the oxide layer, the semiconductor surface is typically exposed and chemically reacted with either wet or dry oxygen at elevated temperatures prior to film deposition. Control over the thickness is achieved through reaction parameters, such as duration and temperature. [12] Tuning oxide thickness is crucial for device performance; too thin an oxide results in negligible barrier, while too thick results in complete insulation. Many theoretical studies attempted to pinpoint the exact role of the insulating layer, however, it appears that several mechanisms take place simultaneously, and different thickness regimes should be individually considered. [6,13] As an example, in an Al-SiO 2 -SiThe electronic properties of the heterojunction formed by chemical bath deposition of a thorium-and oxygen-doped PbS nanostructured layer on GaAs substrate as a function of postgrowth thermal treatments are studied. A correlation is found between the heterojunction conductance and the duration of thermal treatment in air. In contrast to previous reports on the effect of air annealing on PbS films, where the conductance increased due to oxygen incorporation within the PbS, i...

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Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

Cited by 24 publications

References 25 publications

Synthesis and characterization of PbS nanowires doped with Tb3+ ions by using chemical bath deposition method

Synthesis and characterization of PbS nanowires doped with Tb3+ ions by using chemical bath deposition method

Photoluminescence studies of chemically bath deposited nanocrystalline lead sulphide (PbS) thin films

Postgrowth Control of the Interfacial Oxide Thickness in Semiconductor–Insulator–Semiconductor Heterojunctions

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