Photoluminescence properties of silicon nanocrystals as a function of their size

Ledoux, Gilles; Guillois, O.; Porterat, D.; Reynaud, C.; Huisken, F.; Kohn, Bernhard; Paillard, Vincent

doi:10.1103/physrevb.62.15942

Cited by 487 publications

(387 citation statements)

References 39 publications

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“…On the basis of the observed enhancement and red shift of the PL with increasing annealing time and temperature, we conclude that our samples contain silicon nanocrystals. 3,5 Another piece of evidence for the presence of nanocrystals comes from capacitance-voltage (CV) measurements. Accordingly, MOS capacitors with bare oxide do not show any hysteresis in the CV curves, whereas capacitors with Si(nc) show hysteresis that depends on the nanocrystal density (adjusted by annealing temperature), 6 which is also the case for the samples used in this work.…”

Section: Methodsmentioning

confidence: 99%

X-ray Photoelectron Spectroscopic Analysis of Si Nanoclusters in SiO₂ Matrix

et al. 2005

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We investigated silicon nanoclusters Si(nc) in a SiO 2 matrix prepared by the plasma-enhanced chemical vapor deposition technique, using X-ray photoelectron spectroscopy (XPS) with external voltage stimuli in both static and pulsed modes. This method enables us to induce an additional charging shift of 0.8 eV between the Si2p peaks of the oxide and the underlying silicon, both in static and time-resolved modes, for a silicon sample containing a 6 nm oxide layer. In the case of the sample containing silicon nanoclusters, both Si2p peaks of Si(nc) and host SiO 2 undergo a charging shift that is 1 order of magnitude larger (>15 eV), with no measurable difference between them (i.e., no differential charging between the silicon nanoclusters and the oxide matrix could be detected). By use of a measured Auger parameter, we estimate the relaxation energy of the Si(nc) in the SiO 2 matrix as -0.4 eV, which yields a -0.6 eV shift in the binding energy of the Si(nc) with respect to that of bulk Si in the opposite direction of the expected quantum size effect. This must be related to the residual differential charging between the silicon nanoclusters and the oxide host. Therefore, differential charging is still the biggest obstacle for extracting size-dependent binding energy shifts with XPS when one uses the oxide peak as the reference.

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Section: Methodsmentioning

confidence: 99%

X-ray Photoelectron Spectroscopic Analysis of Si Nanoclusters in SiO₂ Matrix

et al. 2005

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“…1 as well, is associated with nanostructured silicon, the socalled S-band [27]. According to the quantum confinement model, the emission wavelength and the PL peak intensity are correlated to nanocrystallite size and the number (density) of nanocrystallites, respectively [28]. Thus, we can conclude that the sizes of nanocrystallites of the sample series no.…”

Section: Pl Characteristics Of Porous Siliconmentioning

confidence: 98%

Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

et al. 2012

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Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H 2 O 2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H 2 O 2 . The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro-or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO 3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF 2 on a silicon surface.

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“…[14][15][16][17] The size tunable emission [18][19][20] , high brightness 21 , and high photostability compared to organic dyes 22 , have made SiNPs attractive materials as fluorescent cellular markers. In addition, silicon is abundant and economical 23 but more importantly silicon has low inherent toxicity.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Diagnostic Silicon Nanoparticles for Targeted Delivery of Thiourea to Epidermal Growth Factor Receptor-Expressing Cancer Cells

Behray

Webster

Pereira

et al. 2016

ACS Appl. Mater. Interfaces

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ABSTRACT:The novel thiourea-functionalized silicon nanoparticles (SiNPs) have been successfully synthesized using allylamine and sulforaphane, an important anticancer drug, followed by a hydrosilylation reaction on the surface of hydrogen terminated SiNPs. Their physiochemical properties have been investigated by photoluminescence emission, FTIR and elemental analysis. MTT assay has been employed to evaluate in vitro toxicity in colorectal cancer cells (Caco-2) and primary normal cells (CCD). The results show significant toxicity of thiourea SiNPs after 72 h incubation in the cancer cell line and the toxicity is concentration dependent and saturated for concentrations above 100 µg/mL. Confocal microscopy images have demonstrated the internalization of thiourea-functionalized SiNPs inside the cells. Flow cytometry data has confirmed receptor-mediated targeting in cancer cells. This nanocomposite takes advantage of the EGFR active targeting of the ligand in addition to the photoluminescence properties of SiNPs for bioimaging purposes. The results suggest that this novel nanosystem can be extrapolated for active targeting of the receptors that are overexpressed in cancer cells such as EGFR using the targeting characteristics of thiourea-functionalized SiNPs and therefore encourage further investigation and development of anticancer agents specifically exploiting the EGFR inhibitory activity of such nanoparticles.

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Photoluminescence properties of silicon nanocrystals as a function of their size

Cited by 487 publications

References 39 publications

X-ray Photoelectron Spectroscopic Analysis of Si Nanoclusters in SiO₂ Matrix

X-ray Photoelectron Spectroscopic Analysis of Si Nanoclusters in SiO₂ Matrix

Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

Synthesis of Diagnostic Silicon Nanoparticles for Targeted Delivery of Thiourea to Epidermal Growth Factor Receptor-Expressing Cancer Cells

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Photoluminescence properties of silicon nanocrystals as a function of their size

Cited by 487 publications

References 39 publications

X-ray Photoelectron Spectroscopic Analysis of Si Nanoclusters in SiO2 Matrix

X-ray Photoelectron Spectroscopic Analysis of Si Nanoclusters in SiO2 Matrix

Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

Synthesis of Diagnostic Silicon Nanoparticles for Targeted Delivery of Thiourea to Epidermal Growth Factor Receptor-Expressing Cancer Cells

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X-ray Photoelectron Spectroscopic Analysis of Si Nanoclusters in SiO₂ Matrix

X-ray Photoelectron Spectroscopic Analysis of Si Nanoclusters in SiO₂ Matrix