Photoluminescence properties of Zn_0.77Cd_0.23O/Mg_0.04Zn_0.96O heterostructures

Abstract

PACS 61.66.Dk, 81.15.Gh Zn 1-x Cd x O/Mg y Zn 1-y O heterostructures were successfully grown by RPE-MOCVD and were investigated by photoluminescence (PL) spectroscopy in order to examine the effects on the barrier and active bandgap energy. Double-heterostructures typically consisting of 15 nm-thick Mg y Zn 1-y O / z (z = 15, 30, 50, 100 nm)-thick Zn 1-x Cd x O / 200 nm-thick Mg y Zn 1-y O were grown on a-plane sapphire substrate. PL measurements were carried out using a He-Cd laser (325 nm) at room temperature. The relationship between the dependencies of luminescence intensity and the PL emission wavelength on the Zn 1-x Cd x O layers by changing the thickness were discussed.

Synthesis of mackinawite FeS thin films from acidic chemical baths

“…Many deposition techniques have been employed to deposit thin films of metal sulfides including metal organic chemical vapor deposition (MOCVD) [9], aerosol assisted chemical vapor deposition (AACVD) [10,11], chemical precipitation [12], plasma source ion sulfuration [7], thermal spray [13], electro-deposition [8,14], hydrothermal method [5], sputtering [15,16] and chemical bath deposition (CBD) [17]. The last of these methods has, however, so far attracted considerable attention.…”

FeS/nickel foam as stable and efficient counter electrode material for quantum dot sensitized solar cells

“…As one of the third-generation solar cells, QDSCs 28 show many advantages compared with the other kind of solar cells, such as low-cost 29 resource, tunable band gap and multiple exciton effect of QDs as absorbers, and 30 simplicity of fabrication [1][2][3]. QDSCs generally consist of QDs, mesoporous oxide friendly.…”

Luminescent Quantum Dots

“…(71)(72)(73) While research is still underway to determine which materials exhibit carrier multiplication, there was one recent report which observed carrier multiplication in a photovoltaic device. (74) ECS Transactions, 33 (33) 3-16 (2011) While most of the research on quantum dot-based solar cells has centered on wide band gap semiconductors, such as CdSe, CdS, and ZnSe, the focus has shifted to narrow band gap semiconductors, such as PbS, FeS 2, and Cu 2 S. (75)(76)(77) This shift in materials is driven in part by the need to develop a commercially viable device. A recent analysis by Kammen et al determined that it is not feasible to use CdS, CdSe, and ZnSe on a global scale because of the current production capacity and limited proven reserves of the materials.…”