Photoluminescence properties of ZnS epilayers

Tran, T. K.; Park, Won; Tong, W.; Kyi, M. M.; Wagner, B. K.; Summers, Christopher J.

doi:10.1063/1.363937

Cited by 207 publications

(114 citation statements)

References 23 publications

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“…The ZnS microstructures spectra show only band to band emission at around 340 nm. Usually, ZnS nanostructure emissions are observed from band to band transition and the exciton combination and extrinsic defects in ZnS and ZnO [23][24][25]. However, only UV emission is observed in our work.…”

Section: Emission Spectra Of the Microcrystalscontrasting

confidence: 52%

STRONG PHOTOLUMINESCENCE EMISSION AT ROOM TEMPERATURE OF ZnS MICROWIRES AND MICROBELTS GROWN BY THERMAL DEPOSITION

Van¹

2017

MaP

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Abstract:In this work, we report on the controlled synthesis of ZnS microstructures with high purity on Au-coated silicon substrates by thermal evaporation of ZnS powder in Ar gas ambient at atmospheric pressure. The growth mechanism is confirmed as a typical vapor-liquid-solid (VLS) process. The prepared ZnS microstructures have wurtzite (hexagonal) structures. The catalytically grown ZnS microstructures, including microwires and microbelts, are tens of micrometers in length. Energy-Dispersive X-Ray Spectroscopy EDS shows that the oxygen composition in the microstructures is trivial. The photoluminescence spectrum reveals strong ultraviolet emission and no other emission at room temperature also demonstrates that the ZnS microstructures are of high crystalline perfection. Optical transition from free exciton A, free exciton B are observed and analyzed through power-dependent at 10 K and temperature-dependent photoluminescence spectroscopy measurements are performed from 10 to 300 K. Our results indicate that ZnS microstructures grown by thermal evaporation, suggesting a great promise for high-efficiency light-emitting devices and lasers in the UV region.

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Section: Emission Spectra Of the Microcrystalscontrasting

confidence: 52%

STRONG PHOTOLUMINESCENCE EMISSION AT ROOM TEMPERATURE OF ZnS MICROWIRES AND MICROBELTS GROWN BY THERMAL DEPOSITION

Van¹

2017

MaP

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“…Sphalerite is a wide gap semiconductor with measured direct band gap of 3.72 eV (Tran et al 1997), whereas troilite has a very narrow experimental gap of ~0.04 eV (Gosselin et al 1976). The calculated band gap for sphalerite in the present work is 2.65 eV.…”

Section: Pure Phasesmentioning

confidence: 49%

A first principles study of the distribution of iron in sphalerite

Wright

Gale

2010

Geochimica et Cosmochimica Acta

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Abstract.Quantum mechanical techniques, based on density functional theory, have been used to study the distribution of iron impurities in sphalerite (ZnS) at compositions ranging from 3.125 to 12.5 mol% FeS. Our results show that iron is most easily incorporated by direct substitution onto the zinc site and that energies for solution reactions involving FeS are exothermic when the system is zinc deficient. Furthermore, there appears to be a small driving force for the formation of bound Fe-Fe pairs at low iron concentrations, though there is no particular preference found for larger clusters of iron. The influence of iron on the sphalerite cell parameter is shown to be sensitive to the presence of Fe-Fe pairs and to the degree of sample non-stoichiometry.3

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“…ZnS is an important II-VI semiconductor with direct wide-bandgap and two stable polymorphs: Zinc-Blende (ZB) with a bandgap of 3.72 eV and Wurtzite (WZ) with 3.77 eV [32][33] . ZnS has been extensively studied due to its unique optical properties and is used in photonic applications such as cathode ray tubes (CRT) 34 , displays [35][36] …”

Section: Introductionmentioning

confidence: 99%

Guided Growth of Horizontal ZnS Nanowires on Flat and Faceted Sapphire Surfaces

et al. 2018

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The surface-guided growth of horizontal nanowires (NWs) allows assembly and alignment of the NWs on the substrate during the synthesis, thus eliminating the need for additional processes after growth. One of the major advantages of guided growth over postgrowth assembly is the control on the NWs direction, crystallographic orientation, and position. In this study, we use the guided growth approach to synthesize high-quality, single-crystal, aligned horizontal ZnS NWs on flat and faceted sapphire surfaces, and show how the crystal planes of the different substrates affects the crystal structure and orientation of the NWs. We also show initial results of the effect of Cu doping on their photoluminescence. Such high-quality aligned ZnS NWs can potentially be assembled as key components in phosphorescent displays and markers due to their unique optical properties. The ZnS NWs have either wurtzite or zinc-blende structure depending on the substrate orientations and contain intrinsic point defects such as sulfur vacancies, which are common in this material. The crystallographic orientations are consistent with those of guided NWs from other semiconductor materials, demonstrating the generality of the guided growth phenomenon. The successfully grown ZnS NWs and the Cu doping are the first step toward the fabrication of optoelectronic devices based on ZnS nanostructures.

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Photoluminescence properties of ZnS epilayers

Cited by 207 publications

References 23 publications

STRONG PHOTOLUMINESCENCE EMISSION AT ROOM TEMPERATURE OF ZnS MICROWIRES AND MICROBELTS GROWN BY THERMAL DEPOSITION

STRONG PHOTOLUMINESCENCE EMISSION AT ROOM TEMPERATURE OF ZnS MICROWIRES AND MICROBELTS GROWN BY THERMAL DEPOSITION

A first principles study of the distribution of iron in sphalerite

Guided Growth of Horizontal ZnS Nanowires on Flat and Faceted Sapphire Surfaces

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