Photoluminescence properties of ZnTe layers grown by photo-assisted metalorganic vapor phase epitaxy

Gheyas, Syed Irfan; Ikejiri, Makoto; Ogata, Takayuki; Ogawa, Hiroshi; Nishio, Mitsuhiro

doi:10.1016/0022-0248(94)91110-x

Cited by 11 publications

(1 citation statement)

References 19 publications

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“…[8][9][10] Briefly, homoepitaxial growth has been performed on undoped ZnTe ͑100͒ single crystal at atmospheric pressure using hydrogen as a carrier gas in a vertical system. High-purity ͑6N͒ dimethylzinc ͑DMZn͒ and diethyltelluride ͑DETe͒ were used as Zn and Te sources, respectively.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy

Tanaka

Hayashida

Nishio

et al. 2003

Journal of Applied Physics

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Articles you may be interested inResidual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates Effects of substrate treatment and growth conditions on structure, morphology, and luminescence of homoepitaxial ZnTe deposited by metalorganic vapor phase epitaxy Photoluminescence ͑PL͒ properties of I-doped ZnTe homoepitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy have been investigated as a function of n-butyliodide ͑n-BuI͒ transport rate. The PL spectrum changed drastically even when a low dopant transport rate was used. A structured emission band at 2.22 eV was detected predominantly at low n-BuI transport rates, whereas a structureless broad emission band at around 2.17 eV or less dominates the PL spectrum at high n-BuI transport rates. PL spectra of I-doped ZnTe layers were analyzed at varying excitation power and temperature. These luminescence bands are due to donor-acceptor pair recombination, and may be ascribed to complexes consisting of Zn vacancies and I on Te sites close to donors.

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Section: Methodsmentioning

confidence: 99%

Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy

Tanaka

Hayashida

Nishio

et al. 2003

Journal of Applied Physics

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New mechanisms in photo-assisted MOVPE of II-VI semiconductors

Irvine

Stafford

Ahmed

et al. 1997

Journal of Elec Materi

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The first detailed comparison has been made of the metalorganic vapor phase epitaxy growth rates of CdTe, ZnTe, and ZnSe, measured in situ with laser reflectometry. The comparison also includes the photo-assisted growth with visible radiation from an argon ion laser. Using a standard Group II precursor (DMCd or DMZn.TEN) partial pressure of 1.5 x 104 atm, VI/II ratio of I and DIPM (M = Te, Se) the maximum growth rates are in the region of 10 to 15 AU/ s. Decrease in growth rates of ZnTe at higher temperatures or higher laser powers have been attributed to the desorption from the substrate of unreacted Te precursor. The behavior of DTBSe is quite different from DIPSe for both pyrolytic and photo-assisted growth. The maximum growth rate is around 1 AU/ s with very little photo-enhancement, except at 300~ Secondary ion mass spectroscopy analysis of hydrogen concentration in the ZnSe layers shows high concentrations, up to 5.9 x 1019 atoms cm 3 for DTBSe grown ZnSe under pyrolytic conditions. These results show that the growth kinetics play an important part in the incorporation of hydrogen and passivation of acceptor doped material.

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