The effect of Ar laser irradiation upon ZnTe homoepitaxial growth has been investigated in low-pressure metalorganic vapor phase epitaxy. Dimethylzinc and diethyltelluride were used as source materials. The growth rate of the ZnTe layer was greatly enhanced by irradiating vertically onto the (100) substrate. Photoluminescence measurements revealed that the quality of the layer is improved by the irradiation. Diethyltelluride is effectively decomposed on the surface by the irradiation.
The use of synchrotron radiation to convert diethylzinc and diethyltelluride molecules into ZnTe has been employed for ZnTe growth. The formation of ZnTe epitaxial layer on (100) oriented GaAs substrate at room temperature is experimentally demonstrated. It is shown by x-ray photoelectron spectroscopy that no carbon is included in the film.
As a novel application of synchrotron radiation, we describe a growth technique for the II–VI compound semiconductors. A growth system suitable for synchrotron-radiation excited deposition has been designed and constructed in the beam line BL4A at the UVSOR facility. Characteristics of this growth system and experimental results with respect to ZnTe as an example are described. It has been confirmed by using the system constructed that this method is useful as a low-temperature growth technique for II–VI compounds.
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