Low-pressure growth of ZnTe by Ar laser-assisted metalorganic vapor phase epitaxy

Abstract

The effect of Ar laser irradiation upon ZnTe homoepitaxial growth has been investigated in low-pressure metalorganic vapor phase epitaxy. Dimethylzinc and diethyltelluride were used as source materials. The growth rate of the ZnTe layer was greatly enhanced by irradiating vertically onto the (100) substrate. Photoluminescence measurements revealed that the quality of the layer is improved by the irradiation. Diethyltelluride is effectively decomposed on the surface by the irradiation.

Growth and characterization of ZnTe epilayers on (100) GaAs substrates by metalorganic vapor phase epitaxy

“…From Fig. 2, the value of the activation energy associated with the growth is determined to be 31 kcal/mol, which is equivalent to that reported for the growth of ZnTe on Si [16] and ZnTe [17] substrates. This indicates the activation energy for the ZnTe growth is due to the pyrolysis of the source materials.…”

Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy

“…From Fig. 1(b), the value of the activation energy associated with the growth is determined to be 31.4 kcal/mol, which is equivalent to the value reported for the growth of ZnTe on Si and ZnTe substrates [17,18]. The result implies that the activation energy for the ZnTe growth is due to the pyrolysis of the source materials.…”