Photoluminescence quantum efficiency of various ternary II–VI semiconductor solid solutions

Westphäling, R.; Bauer, Sondes; Klingshirn, C.; Reznitstsky, A.; Verbin, S. Yu.

doi:10.1016/s0022-0248(98)80224-8

Cited by 11 publications

(8 citation statements)

References 4 publications

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“…In contrast to the low EQE values typically reported for bulk semiconductor materials [5][6][7] , we found that the EQE of single-crystal ZnO nanowires can be higher than 20%. The high material quality was also indicated by an internal quantum efficiency (IQE) of 62%.…”

contrasting

confidence: 99%

High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires

et al. 2011

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External quantum efficiency (EQE) of photoluminescence as high as 20% from isolated ZnO nanowires were measured at room temperature. The EQE was found to be highly dependent on photoexcitation density, which underscores the importance of uniform optical excitation during the EQE measurement. An integrating sphere coupled to a microscopic imaging system was used in this work, which enabled the EQE measurement on isolated ZnO nanowires. The EQE values obtained here are significantly higher than those reported for ZnO materials in forms of bulk, thin films or powders. Additional insight on the radiative extraction factor of one-dimensional nanostructures was gained by measuring the internal quantum efficiency of individual nanowires. Such quantitative EQE measurements provide a sensitive, noninvasive method to characterize the optical properties of low-dimensional nanostructures and allow tuning of synthesis parameters for optimization of nanoscale materials.

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confidence: 99%

High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires

et al. 2011

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“…The larger value of h in sample 1 compared with sample 2 may be due to the difference of the defect density acting as non-radiative center, that is, the defect density in sample 1 can be supposed to be less than that in sample 2. The value of the activation energy for GaN is as small as, or even lower than most of II±VI ternary compounds in this temperature range [4]. This suggests the density of the non-radiative centers in GaN is less, or extremely less than that in II±VI materials which have smaller values of h than GaN.…”

Section: Undoped Samplementioning

confidence: 81%

“…The probability of non-radiative decay increases with deepening the defect level, so it is reasonable to observe that h of sample 1 is larger than that of sample 2. The value of h for sample 1 is about four times larger than that for Cl doped ZnSe % 0X05 at 80 K 1 and is also larger than that of other II±VI semiconductors [4]. It is surprising that GaN has a higher h value than II±VI materials, in spite of the high dislocation density in GaN.…”

Section: Methodsmentioning

confidence: 86%

Emission Quantum Efficiency of Undoped and Eu Doped GaN Determined by Photocalorimetric Spectroscopy

Maruyama

Sasaki

Morishima

et al. 1999

phys. stat. sol. (b)

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“…Thus thermal emission of carriers into the barriers is excluded as a reason for the strong decrease of the PL intensity with increasing temperature. Instead, thermal emission of carriers from localization sites into higher [7] unbound states is more likely, followed by diffusion and subsequent nonradiative recombination [7]. This interpretation is supported by lifetime measurements [5].…”

Section: Resultsmentioning

confidence: 68%