2007
DOI: 10.1016/j.mseb.2007.01.033
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Photoluminescence response of gas sensor based on CHx/porous silicon—Effect of annealing treatment

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Cited by 21 publications
(9 citation statements)
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“…Pyroelectric CO 2 detectors are suitable for only room-temperature operation. Mahmoudi et al (2007) have demonstrated that porous silicon coated with hydrocarbon groups (CH x ) annealed at different temperatures can emit a blue light in response to CO 2 gas. Stabilization of the photoluminescent properties of the porous silicon in an actual sensor device has not yet been established and is undergoing further research.…”
Section: Fiber Optic Co 2 Sensorsmentioning
confidence: 99%
“…Pyroelectric CO 2 detectors are suitable for only room-temperature operation. Mahmoudi et al (2007) have demonstrated that porous silicon coated with hydrocarbon groups (CH x ) annealed at different temperatures can emit a blue light in response to CO 2 gas. Stabilization of the photoluminescent properties of the porous silicon in an actual sensor device has not yet been established and is undergoing further research.…”
Section: Fiber Optic Co 2 Sensorsmentioning
confidence: 99%
“…The controlled preannealing of the PSi surface before metallization was reported by Maji et al (2010) to facilitate the growth and coalescence of the shallow nanocrystallites that help in removing the nanopores on macroporous silicon surfaces and yield much better ohmic contact. Mahmoudi et al (2007) reported the sensitive, direct detection of CO 2 and propane by means of photoluminescencequenching of CH X modified porous Si. CHx films were coated over the PSi samples by RF plasma decomposition of a methane-argon mixture followed by a thermal treatment.…”
Section: Aging Effect Of M-psi Contactsmentioning
confidence: 99%
“…Ma et al 2014 pCHx/PSi/Si Gas sensor (Junction shows a good rectifying behavior and reversible interaction with gases; CHx/PSi layers are responsible for strong band bending at the silicon surface.) Belhousse et al 2004Belhousse et al , 2005Gabouze et al 2006;Mahmoudi et al 2007 Downloaded by [United Arab Emirates University ] at 03:54 27 June 2016…”
Section: Heavily Doped P-n Junction Porous Siliconmentioning
confidence: 99%
“…More recently, to improve the performance of such materials for potential application in integrated circuit devices, the screen-printing technique has been used to fabricate thick films. This technique results in the production of crack-free thick films with a highly porous structure compared with those produced with other deposition techniques [25][26][27].…”
Section: Introductionmentioning
confidence: 99%