Photoluminescence responses of Si nanocrystal to differing pumping conditions

Zhu, Jiang; Wu, Xiang; Zhang, Miao; Wang, Yin; Ning, Xi-Jing; Zhao, Yue; Lu, Ming

doi:10.1063/1.3601350

Cited by 11 publications

(4 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results suggest that the sample of Si-NCs in SOG can be used for multi-color Si lasing. In this work, the gains of the freestanding Si-NCs in SOG are close to those of SiO 2 :Si-NCs obtained using the phase separation method [23,45]. It is noted that for a more precise measurement of optical loss or SES, the spot size needs to be the same as the stripe step for VSL measurement [46].…”

Section: Resultssupporting

confidence: 70%

“…On the right hand side, I 0 ( ) l is the emission intensity, G ( ) l is the net optical gain, andα Tot is the total optical loss due to absorption and scattering. The real gain g( ) l equals G Tot ( ) ( ) l a l + [44,45]. Positive optical gains of Si-NC are obtained, and listed in table 2.…”

Section: Resultsmentioning

confidence: 94%

“…We then test the optical gains of Si-NCs by using the methods of VSL and SES [6,23,44,45]. Figures 6(a)-(c) give the curves of VSL, SES and difference of VSL and SES for the four components (λ=400, 490, 560, 620 nm) in the sample of Si-NCs in SOG annealed at 700 °C, respectively.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

White light emission and optical gains from a Si nanocrystal thin film

et al. 2015

Self Cite

View full text Add to dashboard Cite

We report a Si nanocrystal thin film consisting of free-standing Si nanocrystals, which can emit white light and show positive optical gains for its red, green and blue (RGB) components under ultraviolet excitation. Si nanocrystals with ϕ = 2.31 ± 0.35 nm were prepared by chemical etching of Si powder, followed by filtering. After being mixed with SiO2 sol-gel and thermally annealed, a broadband photoluminescence (PL) from the thin film was observed. The RGB ratio of the PL can be tuned by changing the annealing temperature or atmosphere, which is 1.00/3.26/4.59 for the pure white light emission. The origins of the PL components could be due to differences in oxygen-passivation degree for Si nanocrystals. The results may find applications in white-light Si lasing and Si lighting.

show abstract

Section: Resultssupporting

confidence: 70%

Section: Resultsmentioning

confidence: 94%

See 1 more Smart Citation

White light emission and optical gains from a Si nanocrystal thin film

et al. 2015

Self Cite

View full text Add to dashboard Cite

show abstract

“…For the shorter pumping length (<800 μm), I ASE increases exponentially with the pumping length. According to the one-dimensioned amplifier model, I ASE can be expressed by the following equation: where l is the pumping length of the waveguide, J SP (Ω) is the spontaneous emission intensity within the small solid angle Ω, and g is the net optical gain coefficient. By fitting with the one-dimensional amplifier equation, the net optical gain coefficient g can be obtained.…”

Section: Results and Discussionmentioning

confidence: 99%

Defect Emission and Optical Gain in SiC_xO_y:H Films

Lin

Huang

et al. 2017

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Luminescent SiCO:H films, which are fabricated at different CH flow rates using the plasma-enhanced chemical vapor deposition (PECVD) technique, exhibit strong photoluminescence (PL) with tuning from the near-infrared to orange regions. The PL features an excitation-wavelength-independent recombination dynamics. The silicon dangling bond (DB) defects identified by electron paramagnetic resonance spectra are found to play a key role in the PL behavior. The first-principles calculation shows that the Si DB defects introduce a midgap state in the band gap, which is in good agreement with the PL energy. Moreover, the band gap of a-SiCO:H is found to be mainly determined by Si and C atoms. Thus, the strong light emission is believed to result from the recombination of excited electrons and holes in Si DB defects, while the tunable light emission of the films is attributed to the substitution of stronger Si-C bonds for weak Si-Si bonds. It is also found that the light emission intensity shows a superlinear dependence on the pump intensity. Interestingly, the film exhibits a net optical gain under ultraviolet excitation. The gain coefficient is 53.5 cm under a pumping power density of 553 mW cm. The present results demonstrate that the SiCO system can be a very competitive candidate in the applications of photonics and optoelectronics.

show abstract