Photoluminescence spectra of nitrogen implanted GaSe crystals

Karabulut, Muhammet Ali; Bílír, Gökhan; Mamedov, G. M.; Seyhan, Ayşe; Turan, Raşit

doi:10.1016/j.jlumin.2008.02.014

Cited by 8 publications

(8 citation statements)

References 15 publications

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“…4e). Being weakly bonded to gallium terminated edges, hydrogen ions are rather poor passivators, permitting metal atoms to act efficiently as carrier traps and resulting in non radiative recombination in nanowires at room temperature as for bulk GaSe [14]. The concentration of GaSe discs is too low to emit efficiently, but their presence can be clearly seen on TEM (Fig.…”

Section: Methodsmentioning

confidence: 99%

Synthesis and characterization of colloidal gallium selenide nanowires

Balitskii

Borowiak‐Palen

Konicki

2011

Cryst. Res. Technol.

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Section: Methodsmentioning

confidence: 99%

Synthesis and characterization of colloidal gallium selenide nanowires

Balitskii

Borowiak‐Palen

Konicki

2011

Cryst. Res. Technol.

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“…The doping of GaSe is achieved by intercalation techniques (ion implantation or laser intercalation) 37,38 , annealing in the presence of a doping agent vapor 39 , direct thermal diffusion from dopants in contact with the crystal, or its direct addition into the melt. We found that the doping effect on the physical properties strongly depends on the dopant group, the dopant's ability to form isostructural binary compounds, the number of dopants incorporated and their concentrations, as well on the doping method used.…”

Section: Crystal Growth and Sample Fabricationmentioning

confidence: 99%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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“…1 and 2, respectively. As seen from the figures, the long wavelength tail of both spectra contains an extrinsic and an intrinsic region similar to GaSe, which is determined by exciton states [18,19,22]. The maximum of the exciton PC peak in GaSe 0.9 Te 0.1 is shifted to lower energy at 2.055 eV compared to the peak position in GaSe where it was measured as 2.105 eV at 20 K [18,19].…”

Section: Resultsmentioning

confidence: 80%

“…The difference in the energetic positions of exciton PC and PL peaks is due to the Stokes shift, which implies that the disorders are important in this alloy crystal [23,24]. The additional disorders cause the exciton PL and PC peaks to be broader in alloy crystals compared to those in undoped GaSe crystals [18,19,22]. As seen from Figs.…”

Section: Resultsmentioning

confidence: 99%