2017
DOI: 10.1016/j.mseb.2017.04.006
|View full text |Cite
|
Sign up to set email alerts
|

Photoluminescence studies and crystal field calculations of Yb-doped InGaN nanorods

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2018
2018
2024
2024

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 59 publications
0
1
0
Order By: Relevance
“…191 The near band edge shift occurs in Yb doped In x Ga 1-x N nanorods which depends upon the variation in content of Indium, strain relaxation and quantum confinement. 192…”
Section: In X Ga 1-x N Based Nanostructures For Solid State Lightingmentioning
confidence: 99%
“…191 The near band edge shift occurs in Yb doped In x Ga 1-x N nanorods which depends upon the variation in content of Indium, strain relaxation and quantum confinement. 192…”
Section: In X Ga 1-x N Based Nanostructures For Solid State Lightingmentioning
confidence: 99%