Photoluminescence studies of heavily doped CuInTe2 crystals

Jagomägi, Andri; Krustok, J.; Raudoja, J.; Grossberg, Michael; Danilson, Mati; Yakushev, М. V.

doi:10.1016/s0921-4526(03)00429-0

Cited by 36 publications

(31 citation statements)

References 9 publications

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“…In the low energy side the energy dependence of the PL intensity is exponential whereas in the high energy side the fall of the intensity is steeper. Similar bands with asymmetrical shapes were observed in CZTS grown by other methods [15][16][17][18], as well as, in chalcopyrite-type semiconductors [19][20][21][22][23]. This is the first time PL results are reported for CZTS thin films grown through the sulphurization method.…”

Section: Resultssupporting

confidence: 81%

Study of optical and structural properties of Cu2ZnSnS4 thin films

et al. 2011

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Cu 2 ZnSnS 4 is a promising semiconductor to be used as absorber in thin film solar cells. In this work, we investigated optical and structural properties of Cu 2 ZnSnS 4 thin films grown by sulphurization of metallic precursors deposited on soda lime glass substrates. The crystalline phases were studied by X-ray diffraction measurements showing the presence of only the Cu 2 ZnSnS 4 phase. The studied films were copper poor and zinc rich as shown by inductively coupled plasma mass spectroscopy. Scanning electron microscopy revealed a good crystallinity and compactness. An absorption coefficient varying between 3 and 4 × 10 4 cm −1 was measured in the energy range between 1.75 and 3.5 eV. The bad gap energy was estimated in 1.51 eV. Photoluminescence spectroscopy showed an asymmetric broad band emission. The dependence of this emission on the excitation power and temperature was investigated and compared to the predictions of the donor-acceptor-type transitions and radiative recombinations in the model of potential fluctuations. Experimental evidence was found to ascribe the observed emission to radiative transitions involving tail states created by potential fluctuations.

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Section: Resultssupporting

confidence: 81%

Study of optical and structural properties of Cu2ZnSnS4 thin films

et al. 2011

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“…Such a temperature dependence of hv max (BT) red-shifting up to a temperature of 70 K and then blue-shifting at higher temperatures can be seen in Fig.3(b) and In materials with spatial potential fluctuations the BI band also shows a characteristic asymmetric shape, a red shift with increasing temperature and a significant blue shift with increasing excitation intensity [17,19]. BI includes two processes: BI 1 , the recombination of free holes captured at the acceptors, and BI 2 , the recombination of holes first captured at the valence band tail states, as shown in Fig.4(a).…”

Section: Resultsmentioning

confidence: 73%

“…BI includes two processes: BI 1 , the recombination of free holes captured at the acceptors, and BI 2 , the recombination of holes first captured at the valence band tail states, as shown in Fig.4(a). Therefore similar to the BT band the valence band tail density of states also determines the shape of the low energy side of the BI band [19]. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 9 The shape of the low energy side of the BT and BI bands can be used to estimate .…”

Section: Resultsmentioning

confidence: 99%

A photoluminescence study of CuInSe₂ single crystals ion implanted with 5 keV hydrogen

Yakushev

Krustok

Grossberg

et al. 2016

J. Phys. D: Appl. Phys.

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CuInSe 2 single crystals ion implanted with 5 keV hydrogen at doses from 3x10 14 to 10 16 cm -2 are studied by photoluminescence (PL). The PL spectra before and after implantation reveal two bands, a main dominant band centred at 0.96 eV and a lower intensity band centred at 0.93 eV. Detailed analysis of the shape of these bands, their temperature and excitation intensity dependencies allow the recombination mechanisms to be identified as band-to-tail (BT) and band-to-impurity (BI), respectively. The implantation causes gradual red shifts of the bands increasing linearly with the dose. The average depth of potential fluctuations is also estimated to increase with the dose and saturates for doses above 10 15 cm -2 . A model is proposed which associates the potential fluctuations with the antisite defects copper on indium site and indium on copper site. The saturation is explained by full randomisation of copper and indium atoms on the cation sub-lattice.

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“…For CuInTe 2 , the usually p-type conductivity has been attributed to In Cu antisite defects and anion vacancies, V Te [27]. It is important to mention that the usually believed acceptor character of V Te in CuInTe 2 [27] strongly contrasts with the well-known capability of this type of vacancy for introducing shallow levels to the conduction band in others chalcogenides [28][29][30][31]. In the case of CuFeInTe 3, the substitution of Cu 1+ by the higher valence cation Fe 2+ , leaving a weakly bound electron, can result in an n-type doping.…”

Section: Hall Effect Measurementsmentioning

confidence: 99%

Thermoelectric transport properties of CuFeInTe3

Cabrera

Zumeta-Dubé

Korte

et al. 2015

Journal of Alloys and Compounds

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In this paper we report on the preparation of CuFeInTe 3 and its thermoelectric properties. Optical diffuse reflectance and Raman scattering spectroscopies, as well as X-ray powder diffraction were also carried out. Unprecedented for CuFeInTe 3 , a direct and an indirect bang gap were found from its absorption spectrum. From Hall effect measurements at 300 K the carrier concentration (n), electrical conductivity (σ) and mobility (µ) were determined. In order to investigate whether this material is suitable for thermoelectric applications, the Seebeck coefficient (S), the thermal conductivity (κ) and σ as a function of temperature were measured. The measurements of Hall and Seebeck coefficients showed that alloying CuInTe 2 with Fe 2+ produces a change from the original p-type to n-type conductivity and causes a decrease in κ value, while leaving σ unchanged. Relatively large S values were found for CuFeInTe 3 , with respect to CuInTe 2 , which were explained on the basis of a probable electron effective mass increase due to Fe 2+ incorporation. It was also found, that thermal and electrical conductivities decrease with increasing temperature in the range between 300 and 450 K, while the figure of merit (zT) reaches values of 0.075 and 0.126 at 300 and 450 K respectively. Thus, zT of CuFeInTe 3 increases with temperature, reaching values larger than those reported for CuInTe 2 .

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Photoluminescence studies of heavily doped CuInTe2 crystals

Cited by 36 publications

References 9 publications

Study of optical and structural properties of Cu2ZnSnS4 thin films

Study of optical and structural properties of Cu2ZnSnS4 thin films

A photoluminescence study of CuInSe₂ single crystals ion implanted with 5 keV hydrogen

Thermoelectric transport properties of CuFeInTe3

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Photoluminescence studies of heavily doped CuInTe2 crystals

Cited by 36 publications

References 9 publications

Study of optical and structural properties of Cu2ZnSnS4 thin films

Study of optical and structural properties of Cu2ZnSnS4 thin films

A photoluminescence study of CuInSe2 single crystals ion implanted with 5 keV hydrogen

Thermoelectric transport properties of CuFeInTe3

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A photoluminescence study of CuInSe₂ single crystals ion implanted with 5 keV hydrogen