Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxy

Yamauchi, Satoshi; Goto, Yasushi; Hariu, T.

doi:10.1016/j.jcrysgro.2003.08.002

Cited by 103 publications

(48 citation statements)

References 11 publications

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“…An emission due to donor-acceptor pairs (DAP) was also observed at around 3.23 and 3.31 eV in those films [7,15]. A 0 X emission was not observed in nitrogen-doped ZnO thin films deposited on sapphire substrates by the PARE method [16] and ZnO bulk single crystal substrates [5,17]. These results indicate that nitrogen atoms act as acceptors in homoepitaxial ZnO:N thin films grown by the PARE method in this study.…”

Section: Contributedmentioning

confidence: 52%

Characteristics of high‐quality homoepitaxial ZnO (0001) films grown by the plasma‐assisted reactive evaporation method

Nakagawa

Abe

Chiba

et al. 2009

Phys. Status Solidi (c)

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Homoepitaxial growth of high‐quality non‐doped and nitrogen‐doped ZnO (0001) films could be achieved by the plasma‐assisted reactive evaporation (PARE) method under the conditions of constant oxygen gas flow rate and several nitrogen gas flow (Nf) rates for nitrogen doping. The values of FWHM of XRC for (0002) and (10‐10) planes of the non‐doped ZnO thin film were 31 and 35 arcsec., respectively. The values of FWHM of XRC for (0002) and (10‐10) planes of the nitrogen‐doped ZnO thin film were 49 and 38 arcsec., respectively. The RMS roughness of surfaces of those films measured by AFM was about 0.1‐0.2 nm. In PL spectra (5 K) of the films, the intensity of D0X emission was decreased with increase in Nf rate. However, A0X and DAP emissions were clearly observed in the films grown under conditions of nitrogen gas flow. The intensity ratio between A0X and D0X emissions increased with increase in Nf rate. A‐free exciton (FEA) and n=2 state of FEA emissions were observed at around 3.378 and 3.424 eV, respectively, independently of the Nf rate. Again, in PL spectra (300 K) of the films, the intensity of visible light emission decreased and that of near‐band‐edge emission also decreased with increase in Nf rate. PL spectra of nitrogen‐doped ZnO thin films and emission of ultraviolet light from diodes fabricated using the nitrogen‐doped ZnO films showed that the homoepitaxial films grown by the PARE method were of high quality and that nitrogen atoms fulfilled oxygen vacancies and acted as acceptors in the nitrogen‐doped ZnO thin films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributedmentioning

confidence: 52%

Characteristics of high‐quality homoepitaxial ZnO (0001) films grown by the plasma‐assisted reactive evaporation method

Nakagawa

Abe

Chiba

et al. 2009

Phys. Status Solidi (c)

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“…It is important to prevent the donors during ZnO growth, especially for p-type ZnO growth. Therefore, the origin and the removal process have been studied at the second stage, in addition to the effective acceptor doping into the layer [6,7]. As well recognized, low-temperature photoluminescence (PL) is so useful for evaluation of the impurities.…”

Section: Introductionmentioning

confidence: 99%

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

Yamauchi¹,

Imai²

2013

CSTA

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Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340˚C using Ti 2 O 3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.

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“…The measurements yielded activation energy of 118 ± 12 meV. This value is comparable to the activation energy of the nitrogen acceptor in ZnO [34,35], which indicates possible non-equilibrium carrier trapping on nitrogen-related deep levels. …”

Section: Studies In N-type Znomentioning

confidence: 54%

Cathodoluminescence Studies of Electron Injection Effects in Wide-Band-Gap Semiconductors

Schwarz¹,

Chernyak²,

Flitsiyan³

2012

Cathodoluminescence

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Photoluminescence studies of undoped and nitrogen-doped ZnO layers grown by plasma-assisted epitaxy

Cited by 103 publications

References 11 publications

Characteristics of high‐quality homoepitaxial ZnO (0001) films grown by the plasma‐assisted reactive evaporation method

Characteristics of high‐quality homoepitaxial ZnO (0001) films grown by the plasma‐assisted reactive evaporation method

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

Cathodoluminescence Studies of Electron Injection Effects in Wide-Band-Gap Semiconductors

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