Photoluminescence Studies on InGaN/GaN Quantum Dots

Abstract

InGaN/GaN quantum dots are currently of major interest in basic research and for device application. If material of sufficient quality is available, light emission from blue to green is already possible in this system. We report here on our InGaN/GaN quantum dots grown by metalorganic vapour phase epitaxy (MOVPE). The dot formation was examined using atomic force microscopy (AFM). This work is focused on photoluminescence (PL) and cathodoluminescence (CL) measurements of these InGaN dots. To prove the existence of quantum dots in capped samples we have performed power‐dependent PL and found evidence of state filling, which is typical for quantum dots. These results were confirmed with CL measurements on structured samples.

Initial Experiments to Obtain Self-Assembled GaInN Quantum Islands by MOVPE

“…We investigated the dependence of the density of the islands on the Ga and In precursor flows, substrate temperature and other epitaxial parameters. PL investigations on these structures will be published elsewhere [6].…”