Initial Experiments to Obtain Self-Assembled GaInN Quantum Islands by MOVPE

Abstract

GaInN/GaN islands have been grown by metalorganic vapor phase epitaxy (MOVPE) on SiC substrates. We report on the influence of different growth parameters, such as growth temperature, growth rate or the quantity of deposited material on the growth of such dots. The characterisation of these structures has been done by using atomic force microscopy (AFM) and transmission electron microscopy (TEM). Up to now, the maximum density obtained is 10 10 dots/cm 2 at 660 C at a growth rate of 4 ML/min.

Regions of Different Confinement in Low-Dimensional AlyInxGa1−x−yNGröning1, Pérez‐Solórzano2, Jetter3 et al. 2007Advances in OptoElectronicsSelf Cite4030View full textAdd to dashboardCite

“…This was also previously observed for example in Ga x In 1−x P/GaP QDs, where the dots exhibit an In-rich apex surrounded by a Ga-rich base [21]. In our case, we have higher aluminium incorporation at the base than in the apex, assuming a pyramidal structure as for ternary nitride dots [22]. From these considerations, we determined the step-shaped band structures shown in Figure 5 to explain the emission properties of our samples.…”

In-Redistribution in a GaInN Quantum Well upon Thermal Annealing

“…Instead of using GaInN quantum wells (QWs) as active region of the laser structure the alternative could be the incorporation of quantum dots, which is rarely obtained by selforganized epitaxial growth [2,3]. Therefore, we have investigated the redistribution of indium during thermal annealing which is expected due to the large miscibility gap predicted for GaInN alloys [4][5][6], whether this could be a new possibility for the formation of quantum dots with high In-concentrations.…”