Photoluminescence Study of GaAs Grown Directly on Si Substrates

Enatsu, Masao; Shimizu, Mitsuaki; Mizuki, Toshio; Sugawara, Kazuo; Sakurai, Takeshi

doi:10.1143/jjap.26.l1468

Cited by 42 publications

(3 citation statements)

References 11 publications

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“…However, epitaxial growth often results in films riddled with structural defects, such as anti-phase domains, and threading dislocations. The factors that make it difficult-the deposition of polar GaAs on nonpolar Si, the 4.1% lattice mismatch, and the 50% difference in thermal expansion coefficients [10][11][12][13]-are yet to be overcome. The deposition of a polar material on a nonpolar substrate creates a high density of anti-phase domains, while the lattice mismatch and difference in thermal expansion also causes dislocations and possible cracking [10,14].…”

Section: Introductionmentioning

confidence: 99%

“…The deposition of a polar material on a nonpolar substrate creates a high density of anti-phase domains, while the lattice mismatch and difference in thermal expansion also causes dislocations and possible cracking [10,14]. Some groups are developing growth techniques in order to improve the quality of resulting films [10][11][12][13][15][16][17][18][19], where crystal properties are often studied using tunneling electron microscopy and Raman spectroscopy. Others have been able to measure PL [11,13,17]; unless the layers are intentionally designed as high mobility heterostructures, with contacts attached by means of photolithography [19], very few groups [15,20] have reported carrier mobility.…”

Section: Introductionmentioning

confidence: 99%

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Photoconductivity, carrier lifetime and mobility evaluation of GaAs films on Si (100) using optical pump terahertz probe measurements

Afalla

Gonzales

Prieto

et al. 2019

Semicond. Sci. Technol.

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The carrier lifetimes and electron mobility values were estimated for 2 μm thick GaAs films grown on Si (100) substrates by means of optical pump terahertz probe (OPTP) technique. The GaAs/Si films measured were epitaxial grown at different substrate temperatures (T S =520 °C or T S =630 °C). From x-ray diffraction measurements and Raman spectroscopy, the GaAs/Si films were shown to experience minimum strain at room temperature, and crystal misorientation in the (111) or (110) direction. With no measureable photoluminescence at room temperature, carrier lifetimes were measured via OPTP and found to be ∼20 and ∼35 ps for a fluence of ∼4 μJ cm −2 , which is in the same order of magnitude as a reference bulk GaAs grown on SI-GaAs (T S =630 °C) having a lifetime of ∼70 ps. From OPTP photoconductivity measurements, the estimated GaAs/Si films' electron mobility are ∼2900 cm 2 V −1 s −1 (T S =520 °C) and ∼3500 cm 2 V −1 s −1 (T S =630 °C) at a pump-probe delay time of Δt=50 ps, in which the bulk GaAs electron mobility is ∼5200 cm 2 V −1 s −1 .

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoconductivity, carrier lifetime and mobility evaluation of GaAs films on Si (100) using optical pump terahertz probe measurements

Afalla

Gonzales

Prieto

et al. 2019

Semicond. Sci. Technol.

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“…On the other hand, the FWHM of an in situ annealed sample at 1000°C for 5 min was broadened to be 1275 s, suggesting that the quality of the GaAs buffer layer was damaged by a high-temperature in situ anneal, and that the quality of the buffer layer affected that of the GaAs overlayer. The NBE emission of a GaAs/Si film split into two peaks at 1.492 and 1.472 eV, corresponding to light-hole and heavy-hole band branches, 14 respectively. 3 and 4͒.…”

Section: Resultsmentioning

confidence: 99%

GaAs heteroepitaxial growth on Si substrates with thin Si interlayers in situ annealed at high temperatures

Yodo¹,

Tamura²

1995

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The structural quality of GaAs/Si films can be improved by incorporating a Si interlayer. In this paper, we discuss the effect on the GaAs structural quality of a high-temperature anneal, either in situ between the deposition of the Si layer and subsequent GaAs, or ex situ after the film has been fully grown. The Si interlayer has been found to act as both a cap layer for an in situ high-temperature anneal and a blocking layer of dislocations. The full width at half maximum ͑FWHM͒ of the x-ray rocking curve of ͑400͒GaAs diffraction in 1-m-thick GaAs/Si films decreased from 625 to 388 s upon the incorporation of a Si interlayer. Furthermore, the FWHM was decreased to 200 s by adding an ex situ anneal at 900°C for 1 min after growth. However, it was found in GaAs/Si films with Si interlayers that a 78 meV acceptor level due to a Ga antisite defect was observed from photoluminescence ͑PL͒ at 77 K, and that oval defects were generated from secondary electron-microscope observations. These phenomena suggested in addition to the improved quality that the Si leads to a surface segregation of As, and that Ga droplets are left behind. It was also shown from both the PL peak-energy shift and the broadening of the PL linewidth that the layer structure of the Si interlayer would be destroyed through out-diffusion from Si during an ex situ anneal at temperatures greater than 950°C in GaAs/Si films.

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Use of Photostimulated Vaporization During Growth of A2B5, A2B6, and A4B6 Films

Maksimovskiǐ¹,

Sidorov²

1993

Growth of Crystals

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Photoluminescence Study of GaAs Grown Directly on Si Substrates

Cited by 42 publications

References 11 publications

Photoconductivity, carrier lifetime and mobility evaluation of GaAs films on Si (100) using optical pump terahertz probe measurements

Photoconductivity, carrier lifetime and mobility evaluation of GaAs films on Si (100) using optical pump terahertz probe measurements

GaAs heteroepitaxial growth on Si substrates with thin Si interlayers in situ annealed at high temperatures

Use of Photostimulated Vaporization During Growth of A2B5, A2B6, and A4B6 Films

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