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The photoluminescence (PL) spectra of heteroepitaxial GaAs layers grown on Si substrates by MOCVD and those of epitaxial GaAs films prepared by stripping off the Si substrates were observed at 77 K and 2 K in order to clarify the effect of internal stress in the GaAs layers. It was found that the shift of the PL peak position of the band-edge emission lines at these temperatures can be elucidated quantitatively by the strain due to the difference in the thermal expansion coefficients of GaAs and Si.

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