Photoluminescence study of implantation-induced intermixing of In0.53Ga0.47As/InP single quantum wells by argon ions

Oshinowo, J.; Dreybrodt, J.; Forchel, A.; Mestres, N.; Calleja, J.M.; Gyuro, I.; Speier, P.; Zielinski, E.

doi:10.1063/1.354758

Cited by 13 publications

(4 citation statements)

References 12 publications

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“…Low energy Ar plasma-induced QWI can achieve relatively high or comparable band gap shifts of 104 nm compared to implantation-induced QWI using a 360 keV arsenic ion, 11 a 30 keV argon ion, 12 and a 20 keV plasma immersion argon ion 13 in InGaAs/InP QWs. The defects that formed near the sample surface lead to minimal crystal damage in the QW region during the QWI process as evidenced by the minimal linewidth broadening in PL.…”

Section: Resultsmentioning

confidence: 99%

Large blueshift in InGaAs/InGaAsP laser structure using inductively coupled argon plasma-enhanced quantum well intermixing

Djie¹,

Arokiaraj²,

Mei³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inPhotoreflectance investigations of quantum well intermixing processes in compressively strained In Ga As P ∕ In Ga As P quantum well laser structures emitting at 1.55 μ m Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP An inductively coupled plasma-enhanced quantum well intermixing technique has been developed to induce a shift in the band gap in quantum well structures using argon plasma. The emission of the InGaAs/InGaAsP laser structure was blueshifted as much as 104 nm with linewidth broadening of only 10.6 nm using 5 min plasma exposure and subsequent rapid thermal annealing. This large shift is attributed to inductively coupled plasma at high ion current density ͑with 100's of eV ion impact energy͒ that promotes desirable point defects near the surface of the samples. The result has demonstrated an effective approach for large band gap tuning of InGaAs/InGaAsP laser structures.

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Section: Resultsmentioning

confidence: 99%

Large blueshift in InGaAs/InGaAsP laser structure using inductively coupled argon plasma-enhanced quantum well intermixing

Djie¹,

Arokiaraj²,

Mei³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…1͑a͔͒. 6 This effect can be applied to nonabsorbing waveguide areas as well as to lateral carrier confinement 7 and can be used for the integration of waveguide areas with lasers as schematically shown in Fig. 1͑b͒.…”

Section: Of Faceted Samplesmentioning

confidence: 98%

Focused ion beam implantation for opto- and microelectronic devices

König¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Focused ion beam implantation is a powerful technology for the fabrication of opto- and microelectronic devices. Optoelectronic devices like gain coupled distributed feedback lasers and nonabsorbing waveguides can be defined in semiconductor heterostructures by the band gap shift due to highly spatially resolved implantation induced thermal intermixing. Single mode emitting devices were fabricated with emission wavelengths of 1 and 1.55 μm in the material systems GaInAs/(Al)GaAs and GaInAsP/InP, respectively. Band gap shifts of more than 65 meV could be reached in GaInAsP quantum film structures which simplifies the integration of nonabsorbing waveguide sections with, e.g., lasers, modulators, and detectors. In highly doped semiconductor layers semi-insulating areas could be defined by focused ion implantation. Depletion lengths down to 50 nm can be controlled and were demonstrated on current injection restricted resonant tunneling devices. By using this technique collector-up heterobipolar transistors were fabricated which exhibit current amplification factors up to 45.

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“…In order to create opto-electronic integrated circuits using III-V compound semiconductor heterostructures, such as In 1−x Ga x As y P 1−y /InP quantum wells (QWs), a method for creating areas of differing optical bandgaps from a single laterally homogeneous epitaxial growth is required if regrowths are to be avoided. One method is through laterally selective, compositional intermixing [1], examples of which include dielectric capped, defect-enhanced, interdiffusion [2][3][4], impurity induced intermixing [5][6][7][8][9][10] and ion bombardment induced mixing [11][12][13][14][15][16]. All of these processes include a high temperature rapid thermal anneal to drive the defect-enhanced interdiffusion process in selected areas.…”

Section: Introductionmentioning

confidence: 99%

Compositional intermixing enhancement in InGaAs(P)/InP quantum well heterostructures related to lateral composition modulation

Wyllie

Thompson

1998

Semicond. Sci. Technol.

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Photoluminescence spectroscopy has been used to study proximity-capped, rapid thermal anneal (RTA) interdiffusion of InGaAs/InP and InGaAsP/InP quantum well structures grown by gas source molecular beam epitaxy (GS-MBE). The interdiffusion is characterized as a function of well thickness and composition, cap layer, as well as RTA time and temperature. It is proposed that the dominant source of intermixing derives from the non-homogeneous nature of the quantum well ternaries and quaternaries, and the associated grown-in defects. These probably occur at the phase boundaries between the InAs-and GaP-rich regions produced during growth due to the existence of a miscibility gap. It is also demonstrated that a thin InGaAs cap layer enhances the thermal stability of such structures by reducing the concentration of defects produced at the sample surface during the anneal.

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Photoluminescence study of implantation-induced intermixing of In0.53Ga0.47As/InP single quantum wells by argon ions

Cited by 13 publications

References 12 publications

Large blueshift in InGaAs/InGaAsP laser structure using inductively coupled argon plasma-enhanced quantum well intermixing

Large blueshift in InGaAs/InGaAsP laser structure using inductively coupled argon plasma-enhanced quantum well intermixing

Focused ion beam implantation for opto- and microelectronic devices

Compositional intermixing enhancement in InGaAs(P)/InP quantum well heterostructures related to lateral composition modulation

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