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Articles you may be interested inPhotoreflectance investigations of quantum well intermixing processes in compressively strained In Ga As P ∕ In Ga As P quantum well laser structures emitting at 1.55 μ m Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP An inductively coupled plasma-enhanced quantum well intermixing technique has been developed to induce a shift in the band gap in quantum well structures using argon plasma. The emission of the InGaAs/InGaAsP laser structure was blueshifted as much as 104 nm with linewidth broadening of only 10.6 nm using 5 min plasma exposure and subsequent rapid thermal annealing. This large shift is attributed to inductively coupled plasma at high ion current density ͑with 100's of eV ion impact energy͒ that promotes desirable point defects near the surface of the samples. The result has demonstrated an effective approach for large band gap tuning of InGaAs/InGaAsP laser structures.

Articles you may be interested inImplementing multiple band gaps using inductively coupled argon plasma enhanced quantum well intermixing Large blueshift in InGaAs/InGaAsP laser structure using inductively coupled argon plasma-enhanced quantum well intermixing Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP

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In this letter, we demonstrate the realization of strong bonding between GaAs epilayers on Si substrates by using selenium sulphide (SeS2) compound. After bonding, the sample has been transplanted to Si substrate using the epitaxial lift-off process. Such a transplanted film was found to be very smooth and adhered well to Si. The resulting chemical bond was covalent in nature, robust, and withstood clean room processing steps. The film bonded in this manner exhibited very good photoluminescence and high crystal quality by double crystal x-ray diffraction. The double crystal x-ray diffraction had a low full width at half maximum of 44 arcsec, and the strain was absent in these types of heterostructures. The interfacial chemical reaction and bonding were studied by depth profile x-ray photoelectron spectroscopy. It was concluded that Ga–Se and Si–S phases such as Ga2Se3 and SiS2 were responsible for the strong bonding between GaAs and Si.