High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2

Arokiaraj, J.; Soga, Tetsuo; Jimbo, Takashi

doi:10.1063/1.125469

Cited by 23 publications

(10 citation statements)

References 12 publications

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“…In this case there are no defects inevitably appearing in the film under heteroepitaxy, and the FWHM value is determined by imperfections occurring during homoepitaxial GaAs/GaAs growth and bonding to the Si wafer. Thus, Arokiaraj et al [36], having realised the bonding of GaAs film to the Si wafer and having removed the GaAs wafer using selective etching, note that the FWHM of such a 3 m GaAs film is equal to 44 arc sec. (Fig.…”

Section: Direct Gaas-on-si Epitaxymentioning

confidence: 99%

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Bolkhovityanov¹,

Pchelyakov²

2009

TONANOJ

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While silicon and gallium arsenide are dominant materials in modern micro-and nanoelectronics, devices fabricated from them still use Si and GaAs substrates only separately. Integrating these materials on the large and cheep Si substrate has been the subject of enormous research efforts for the past three decades. This review attempts to systematize and generalize the current understanding of the fundamental physical mechanisms governing the epitaxial growth of GaAs and related III-V compounds on Si substrates. Different kinds of bonding as a very promising non-epitaxial method for III-V thin film integration on Si substrate are reviewed. Basic techniques available for improving the quality of such heterostructures are described, and recent advances in fabricating of device-quality III-V-on-Si heterostructures and corresponding devices are also presented.

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Section: Direct Gaas-on-si Epitaxymentioning

confidence: 99%

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Bolkhovityanov¹,

Pchelyakov²

2009

TONANOJ

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“…[6] The stress would limit the size of the bonded sample and even cause debonding. In order to decrease the annealing temperature, some technologies of surface treatment have been currently developed such as sequential plasma treatment [7][8][9], atom beam irradiation, polymer bonding, SeS2 surface modification [10], etc. In case of plasma or atom beam treatment, the required equipment is quite complex and expensive.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature Si/Si wafer bonding using boride-treated surface

et al. 2009

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An approach for Si/Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the Si fracture energy by annealing at 180°C. The properties of the bonded structures were studied in terms of the interface shape, electrical and optical characteristic through scanning electron microscopy (SEM), interface I-V curve, and so on. In this method, the surfaces of two wafers are active by Boride solution, and then following a thermal annealing process. The bonding strength was found to be sufficiently high and could withstand the subsequent etching and polishing procedures of the bonded wafers. This low temperature wafer bonding technology can be used in Optic Electronics Integrated Circuit and this technology with potential to meet a broad range of future telecommunication and computing systems' needs.

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“…[1][2][3] The overall achieved results, however, do not compare to the standards of the homoepitaxial growth of MBE and MOCVD and it seems that sophisticated epitaxial methods are eventually not the right techniques to conquer the aforementioned mismatches between GaAs and Si. 4 A possible way to overcome the difficulties is an interlayer between GaAs and Si. In 2001, scientists at Motorola pointed out that strontium titanate (SrTiO 3 ) eases the lattice stress between Si and GaAs and successful growth with MBE was expected.…”

Section: Introductionmentioning

confidence: 99%

“…Meanwhile, other techniques, such as epitaxial lift-off and direct wafer bonding have been considered as alternative deposition methods. 4,6 At Bowling Green State University (BGSU), pulsed-laser deposition (PLD) is investigated as a cost-effective alternative method to deposit high-quality GaAs on various substrates. PLD underlies a completely different deposition mechanism than epitaxial growth.…”

Section: Introductionmentioning

confidence: 99%

The formation of GaAs/Si photodiodes by pulsed-laser deposition

Erlacher

Jaeger

2004

SPIE Proceedings

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Hetero-pairing of thin-film GaAs on Si is of considerable interest for novel applications in optoelectronics. However, the formation of high-quality GaAs is difficult and requires expensive top technologies such as molecular beam epitaxy (MBE) and related methods. In general, MBE forms high-quality epitaxial layers but is not capable of the straightforward formation of GaAs on Si because of the 4.1% lattice mismatch between both materials. We have developed and explored the possibilities of pulsed-laser deposition (PLD) for the formation of GaAs films on (100) ntype Si substrates. The films have been produced in vacuum (10 -6 torr) employing the fundamental (1064 nm), second (532 nm), and third (355 nm) harmonic emission of a Nd:YAG laser with a repetition rate of 10 Hz and a pulse duration of 6 ns. The laser was focused on (100) p-type (10 19 cm -3 ) GaAs wafers with an energy fluence of 0.79-0.84 J/cm 2 . During the deposition, the substrate was not heated. The current-voltage characteristic of the samples showed rectification, i.e., the doping of the GaAs target was successfully maintained in the PLD film and a diode was formed in conjunction with the oppositely doped Si substrate. The observation of photocurrent without bias is an additional proof that an operating junction was achieved. The crystallographic quality of the films was checked by x-ray analysis and revealed that the films show [111]-oriented crystalline parts. The realization of GaAs/Si photodiodes reveals the potential of PLD to be used for the monolithic integration of GaAs photonic devices with Si circuits.

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High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2

Cited by 23 publications

References 12 publications

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

III-V Compounds-on-Si: Heterostructure Fabrication, Application and Prospects

Low-temperature Si/Si wafer bonding using boride-treated surface

The formation of GaAs/Si photodiodes by pulsed-laser deposition

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