Experimental and Theoretical Analysis of Argon Plasma-Enhanced Quantum-Well Intermixing

Plasma-induced quantum well intermixing for the universal high-density photonic integration

“…For all cases, the shift increases at the short exposure time followed by the shift saturation. The trend follows our theoretical model (solid lines) that most of point defects responsible for intermixing will be created in the early exposure [5]. As the point defects start to build up, fewer defects are created.…”

Analysis of inductively coupled argon plasma-enhanced quantum-well intermixing process for multiple bandgap implementation

“…The linear fittings of L 2 d against t result in non-zero intercepts at RTA t ¼ 0 min, indicating a quick broadening of the QWs at the initial stage of RTA. This is mainly due to the grow-in defects at the well/barrier interface for the as-grown sample; while for the plasmaexposed samples, the generated near-surface point defects may have a significant contribution due to their fast diffusivity [4]. A good linear fitting of L 2 d against t is obtained confirming the assumption that the interdiffusion process obeys Fick's law and D is constant.…”

“…1 using a theoretical calculation of interdiffused QWs [4]. The calculation assumes that the interdiffusion process obeys Fick's law with a constant interdiffusion coefficient.…”

Bandgap engineering in semiconductor quantum dots

“…With the demonstration of the QD Fabry-Perot lasers [1,2], much interest have been generated in post-growth intermixing of QD structures to develop processes for monolithic integration of QD devices. Various intermixing techniques have been reported for QW intermixing, these include impurity free vacancy disordering [3], impurity-induced disordering [4], plasma-assisted induced disordering [5] and laserinduced intermixing [6]. In this study, we investigated the tuning of the QD bandgap energy due to group-V element exchange in 1.6 mm InAs/InP QDs grown by metal-organic chemical vapor deposition (MOCVD), as well as group-III element exchange in 1.3 mm InAs/GaAs QDs grown by molecular-beam epitaxy (MBE), by rapid thermal annealing (RTA) and laser-induced intermixing techniques.…”