Photoluminescence study of γ-In2Se3 epitaxial films grown by molecular beam epitaxy

The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

“…The results are in good agreement with g-In 2 Se 3 epitaxial film grown by MBE in an early report. [20,21] The intensity of sample with AlN buffer layer is much stronger than that without AlN buffer layer. Sample with AlN buffer layer has full-width and half-maximum (FWHW) dropped from 109 to 21 meV.…”

Structural and optical characterization of single-phase γ-In2Se3 films with room-temperature photoluminescence

“…Recently, ␥-In 2 Se 3 is found to be a promising candidate that can be used for Cd-free buffer layer for CIGS solar cell [6]. The In 2 Se 3 films have been grown by sputtering [7], annealing of cold-deposited In/Se multilayers [8], molecular beam epitaxy [4,9,10], etc. in early research.…”

Structural control of In 2 Se 3 polycrystalline thin films by molecular beam epitaxy

“…γ-In 2 Se 3 has a direct bandgap of approximately 1.9 eV [12]. Until now, we reported the epitaxial growth of Ga 2 Se 3 , α-In 2 Se 3 and γ-In 2 Se 3 films by molecular beam epitaxy (MBE) and anisotropic features in the ordered structures [1][2][3][13][14][15][16]. Multiple-junction solar cells have attracted considerable attension for achieving higher PV efficiencies than single junction ones [17].…”