The growth of single-phase In2Se3 by using metal organic chemical vapor deposition with AlN buffer layer

Photoelectrochemical properties of In2Se3 thin films: Effect of substrate temperature

“…After refinement, the cell constants were calculated to be a = b = 4.014 Å and c = 9.64Å; which are consistent with the reported data [33]. The crystallite size for indium selenide thin films is found to be in the range of 18-26 nm.…”

Properties of spray deposited nanocrystalline indium selenide thin films

“…Extended crystalline phases represent a prerequisite in photovoltaic applications [35]. After refinement, the cell constants were calculated to be a = b = 4.014 Å and c = 9.64 Å ; which are consistent with the reported data [36].…”

Structural and optical characterization of single-phase γ-In2Se3 films with room-temperature photoluminescence

“…It was found that the emission at 2.145 eV becomes eminent and finally dominant while the intensities of the other three peaks decrease rapidly with increasing temperature. The three peaks located at 2.141, 2.133 and 2.114 eV became disappeared after the temperature was increased above 60 K. Therefore, the peak at 2.145 eV was attributed to free exciton emission and the other three peaks were attributed to bound excitons or defectrelated emissions [13][14][15]. Fig.…”

“…Lin). films on Si(1 1 1) or Si(1 0 0) substrates by MOCVD using H 2 Se and TMI precursors [13][14][15]. However, the as-grown ␥-In 2 Se 3 epitaxial thin films can emit photoluminescence (PL) only at low temperature, which limit a complete understanding of their properties.…”