Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

Yu, C.F.; Chao, Der-Sheng; Chen, Yi Fan; Liang, Jenq–Horng

doi:10.1016/j.nimb.2012.12.116

Cited by 3 publications

(2 citation statements)

References 16 publications

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“…233,234 In addition, Ge remains stressed after annealing partly due to incorporation in the matrix material. [234][235][236] Therefore, after annealing, the only PL observed is defect related PL around 350 nm and 450 nm. 237 In addition, red PL has been observed for Ge implanted in SiO 2 .…”

Section: -19mentioning

confidence: 98%

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Quantum confinement in Si and Ge nanostructures: Theory and experiment

Barbagiovanni

Lockwood

Simpson

et al. 2014

Applied Physics Reviews

200

132

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The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO 2 , and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si 3 N 4 and Al 2 O 3. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters. V

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Section: -19mentioning

confidence: 98%

“…5 Ge QDs are highly stressed due to the nature of the interface. [234][235][236] c. Defect states. Defects formed during the implantation process include oxygen vacancy defects, V O , E 0 centres, and non bridging oxygen hole centres (NBOHC).…”

Section: Ion Implantationmentioning

confidence: 99%

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Barbagiovanni

Lockwood

Simpson

et al. 2014

Applied Physics Reviews

200

132

View full text Add to dashboard Cite

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Influence of post‐annealing ambient gas on photoluminescence characteristics for ion beam synthesized Ge nanoparticles in SiO₂ and Si₃N₄ films

Chao

Tsai

et al. 2014

Surface & Interface Analysis

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Ion beam synthesized Ge nanoparticles in SiO2 film have received intense interest due to their distinctive optical features. Nevertheless, the fundamental mechanism behind luminescence from Ge nanoparticles still remains under debate. In order to investigate the influence of oxygen content on the optical properties of Ge nanoparticles, post‐annealing treatments under various annealing atmospheres including vacuum, air, and N2 were conducted to synthesize Ge nanoparticles. An oxygen‐free Si3N4 matrix material was also adopted to compare with the results of SiO2 one. The results revealed that photoluminescence (PL) around 3.1 eV can be emitted from Ge‐implanted SiO2 films. However, Ge‐implanted SiO2 films appear remarkably diverse PL characteristics when annealed in different ambient gases. PL intensity fluctuates with temperature in the specimens annealed under vacuum and air due to the GeOx formation and dissolution. Otherwise, the N2‐annealed specimens can suppress germanium oxidation process, thus allowing for an entirely different evolution of PL intensity with temperature. In contrast to the SiO2 matrix, no PL emission can be found for the Ge nanoparticles formed in the Si3N4 films, again proving that the 3.1‐eV emission band indeed originates from the oxygen‐deficient centers at the interface between SiO2 matrix and Ge or GeOx nanoparticles. Copyright © 2014 John Wiley & Sons, Ltd.

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Photoluminescent Au-Ge composite nanodots formation on SiO 2 surface by ion induced dewetting

Datta

Siva

Singh

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

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Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

Cited by 3 publications

References 16 publications

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Influence of post‐annealing ambient gas on photoluminescence characteristics for ion beam synthesized Ge nanoparticles in SiO₂ and Si₃N₄ films

Photoluminescent Au-Ge composite nanodots formation on SiO 2 surface by ion induced dewetting

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Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

Cited by 3 publications

References 16 publications

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Quantum confinement in Si and Ge nanostructures: Theory and experiment

Influence of post‐annealing ambient gas on photoluminescence characteristics for ion beam synthesized Ge nanoparticles in SiO2 and Si3N4 films

Photoluminescent Au-Ge composite nanodots formation on SiO 2 surface by ion induced dewetting

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Influence of post‐annealing ambient gas on photoluminescence characteristics for ion beam synthesized Ge nanoparticles in SiO₂ and Si₃N₄ films