Photoluminescent Properties of Hydrogenated Amorphous Silicon Oxide Powders

Abstract

The photoluminescence properties of hydrogenated amorphous silicon oxide powder SiO0.92H0.53 were investigated. The powder was prepared by reacting lithium with trichlorosilane in tetrahydrofuran. The luminescence peak energy was located between 1.0 and 1.61 eV. The samples were treated under different conditions such as annealing, hydrolysis, and hydrolysis plus HF etching. The changes of the photoluminescent intensity and location on the treated powders can be explained by the electronic density of state model of amorphous semiconductors. The temperature dependence of luminescence properties of the powders can be described by the relationship of thermal quenching effect: ln[Io/I(T) – 1] = ED/Eo = T/To at temperatures between 100 and 300 K.

Electrical Characterization of Thermal-Annealed Very Thin Barium-Doped Titanium Silicon Oxide Prepared by Liquid-Phase Deposition

“…The absorption peak at 608 cm −1 is assigned to the Si-Si bond. 11,12 The peak at 810 cm −1 is assigned to the Si-O-Si bond ͑bending-mode͒. 13 The peak at 895 cm −1 is assigned to the Si-H bond.…”

“…The absorption intensity decreases with the wave number due to the lack of baseline correction for FTIR spectra. The absorption peak at 608 cm −1 is assigned to the Si-Si bond 11,12. The peak at 810 cm −1 is assigned to the Si-O-Si bond ͑bending-mode͒ 13.…”