Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method

Firsov, D. D.; Комков, О. С.

doi:10.1134/s1063785013120079

Cited by 23 publications

(13 citation statements)

References 11 publications

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“…The entire structure is terminated by the same GaAs 0.08 Sb 0.92 layer. In order to measure photoluminescence (PL) and photoreflectance (PR) in a wide spectral range an evacuated Fourier-transform (FT) spectrometer Bruker Vertex 80v was used and operated in step-scan mode (Firsov and Komkov 2013;Motyka et al 2009b;Motyka and Misiewicz 2010). A liquid-nitrogen cooled mercury cadmium telluride photodetector and a KBr beamsplitter were employed.…”

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confidence: 99%

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

et al. 2016

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Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid-and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.

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confidence: 99%

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

et al. 2016

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“…The PR characterization was performed at 77 K with the technique based on a step‐scan FTIR spectrometer, and the state‐of‐art details of such PR measurement can be found in Refs. .…”

Section: Methodsmentioning

confidence: 99%

Above‐Hg_1−x Cd_x Te‐bandgap photoluminescence and interfacial channels in Hg_1−x Cd_x Te–CdTe heterostructure

Zhu

et al. 2015

Physica Status Solidi (b)

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HgCdTe–CdTe heterostructures are important for HgCdTe‐based low‐dimensional structures and infrared detectors. However, studies concerning parasitic heterostructure introduced by the passivation are very limited and within electrical characterizations. In this work, temperature‐dependent infrared photoluminescence (PL) measurements are performed on CdTe–passivated‐HgCdTe interfaces with 1064‐nm laser excitation. Besides the common HgCdTe band‐edge PL, abnormal PL features are observed about 100 meV above the HgCdTe band gap, which are active at low temperatures and accompanied by the quench of near‐band‐edge ones. Photoreflectance and temperature dependent PL analysis indicate that such abnormal features are from radiative recombinations between electrons in HgCdTe and holes in the passivation layer. Such channels compete severely with the near‐band‐edge ones, and may deteriorate the detector performance.

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“…Similar FT-based approaches have been demonstrated as very efficient for probing QW transitions in the mid infrared range by several groups. [19][20][21][22] In our case, a liquid-nitrogen cooled MCT (mercury cadmium telluride) photodiode was used as a detector. In this measurement configuration, the pump beam was provided by the 660 nm line of a semiconductor laser diode, which was mechanically chopped at a frequency of 275 Hz.…”

Section: Methodsmentioning

confidence: 99%

On the modified active region design of interband cascade lasers

Motyka

Ryczko

Dyksik

et al. 2015

Journal of Applied Physics

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Articles you may be interested inEight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared J. Appl. Phys. 114, 223519 (2013); 10.1063/1.4843076 onHigh-peak-power strain-compensated GaInAs/AlInAs quantum cascade lasers ( λ ∼ 4.6 μ m ) based on a slightly diagonal active region design Appl. Phys. Lett. 93, 251110 (2008); 10.1063/1.3054165Mid-infrared In As ∕ Al Ga Sb superlattice quantum-cascade lasers Appl. Phys. Lett.Type II InAs/GaInSb quantum wells (QWs) grown on GaSb or InAs substrates and designed to be integrated in the active region of interband cascade lasers (ICLs) emitting in the mid infrared have been investigated. Optical spectroscopy, combined with band structure calculations, has been used to probe their electronic properties. A design with multiple InAs QWs has been compared with the more common double W-shaped QW and it has been demonstrated that it allows red shifting the emission wavelength and enhancing the transition oscillator strength. This can be beneficial for the improvements of the ICLs performances, especially when considering their long-wavelength operation. V C 2015 AIP Publishing LLC. [http://dx.

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Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method

Cited by 23 publications

References 11 publications

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Above‐Hg_1−x Cd_x Te‐bandgap photoluminescence and interfacial channels in Hg_1−x Cd_x Te–CdTe heterostructure

On the modified active region design of interband cascade lasers

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Photomodulation fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method

Cited by 23 publications

References 11 publications

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Above‐Hg1−x Cdx Te‐bandgap photoluminescence and interfacial channels in Hg1−x Cdx Te–CdTe heterostructure

On the modified active region design of interband cascade lasers

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Above‐Hg_1−x Cd_x Te‐bandgap photoluminescence and interfacial channels in Hg_1−x Cd_x Te–CdTe heterostructure