Photon emission from metal-oxide-semiconductor capacitors under fast-ramp conditions

Abstract

Articles you may be interested inCharacterization and modeling of fast traps in thermal agglomerating germanium nanocrystal metal-oxidesemiconductor capacitor J. Appl. Phys. Investigation of charging phenomena in silicon nanocrystal metal-oxide-semiconductor capacitors using ramp current-voltage measurementsLow-intensity photon emissions from a metal-oxide-semiconductor (MOS) capacitor biased with a fast-ramp voltage have been measured with a gated photon counting technique. The number of photons detected in depletion, avalanche, electron emission, and accumulation regimes of one ramp cycle shows characteristic time dependence that manifests novel aspects of the many-electron dynamics in an MOS surface potential well. This optical signature provides direct evidence for hot-electron relaxation via intersubband transitions and electronhole recombinations at the interface trap sites.