A new ion energy analyzer with high angular resolution (⩽3×10−4 sr) is described. It consists of a microchannel plate followed by a retarding-grid type analyzer. The microchannel plate is not used for charge multiplication but as a geometric filter with narrow angular passband (ϑ≃0.6°) yet high transparency (T≃60%). The energy analyzer is used to measure the true velocity space distribution of low-energy ion beams (Eb = 10–100 eV) in a double plasma device. Its superior performance over the conventional gridded energy analyzer is demonstrated. Applications to the study of beam wakes are shown.
A charge-accumu1ationand..mu1tip1ication photodetector (CHAMP) has been developed. The unit cell contains three coupled MOS capacitors designated as detector, transfer, and avalanche gates. The photocu.rrent at the detector gate is first integrated with the transfer gate closed and with the avalanche gate ramping toward avalanche voltages. The charge is then transferred to the avalanche gate where charge multiplication occurs. These processes induce a displacement current pulse for readout which is proportional to the photocurrent, the integration time, and the multiplication gain factor, and is inversely proportional to the transfer time. A tunable current gain capable ofexceeding the avalanche gain is achieved. A cooled CHAMP device is suitable for detecting photons ofextremely low flux. The internal current gain and noise issues are discussed.
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Investigation of charging phenomena in silicon nanocrystal metal-oxide-semiconductor capacitors using ramp current-voltage measurementsLow-intensity photon emissions from a metal-oxide-semiconductor (MOS) capacitor biased with a fast-ramp voltage have been measured with a gated photon counting technique. The number of photons detected in depletion, avalanche, electron emission, and accumulation regimes of one ramp cycle shows characteristic time dependence that manifests novel aspects of the many-electron dynamics in an MOS surface potential well. This optical signature provides direct evidence for hot-electron relaxation via intersubband transitions and electronhole recombinations at the interface trap sites.
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