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Absfruct-The irradiation behavior [up to -1.3 Mrad(SiO,)]of MOS capacitors (SO nm thick dry grown SO,, AI, or poly-SI gate) with or without postoxidation anneal (POA) in Ar at 1OOO"C has been studied by conventional capacitance-voltage ( C Y ) analysis and thermally stimulated current techniques. The most important finding is that all of the samples processed for radiation hardness, i.e., without POA, exhibited a charge compensation effect. The radiation-induced positive oxide charge is partially compensated by a negative j k e d interface charge which lies either outside the energy range accessible by CY and similar techniques or extends spatially away from the interface into the oxide without acquiring the characteristics of a "bulk" oxide charge. The existence of this fixed charge may jeopardize long-term device reliability as an interface charge is more prone to change than an oxide charge.

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