Saturation of radiation-induced threshold-voltage shifts in thin-oxide MOSFETs at 80 K

Klein, Richard B.; Saks, N. S.; Shanfield, Z.

doi:10.1109/23.101178

Cited by 8 publications

(6 citation statements)

References 25 publications

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“…The saturation of fixed positive charge at Mrad dose levels has been previously reported (26)(27)(28). This saturation can be explained in terms of increased electron-hole recombination (26) and electron compensation of trapped positive charge (27,28) as positive charge buildup reaches a maximum.…”

Section: Gate Biasmentioning

confidence: 80%

“…At this point electrons are no longer swept away from the trapping region and recombination with radiation-induced holes before the holes become trapped is enhanced. It also follows that at this point, some of the holes which have become trapped recombine with electrons in this region (28). Thus, a critical trapped hole density is reached where electron-hole recombination is enhanced and additional hole trapping events are balanced by electron compensation, such that the measured net voltage shift due to positive charge is observed to reach a saturation value.…”

Section: Gate Biasmentioning

confidence: 96%

“…This saturation can be explained in terms of increased electron-hole recombination (26) and electron compensation of trapped positive charge (27,28) as positive charge buildup reaches a maximum. As radiation-induced holes become trapped near the Si/SiQ interface, a positive space-charge field develops in the oxide.…”

Section: Gate Biasmentioning

confidence: 98%

See 2 more Smart Citations

Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators

Walters

Reisman

1991

J. Electrochem. Soc.

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Optically assisted electron injection was employed to quantify neutral electron trap and fixed positive charge concentrations in the gate oxides of electrically biased n-channel insulated gate field effect transistors exposed to 10 keV x-rays. This is the first known work to study the effects of an applied gate oxide field during x-ray irradiation on neutral electron trap generation. Surprisingly, the results show that neutral electron trap generation is dependent upon the gate bias, and the oxide thickness in a similar manner as positive charge buildup during irradiation. This possibly suggests an association between the two defect types. A neutral electron trap generation model is proposed in which the E~ trapped hole center transforms into a dipolar neutral electron trapping site via electron compensation by an electron.

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Section: Gate Biasmentioning

confidence: 80%

Section: Gate Biasmentioning

confidence: 96%

See 1 more Smart Citation

Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators

Walters

Reisman

1991

J. Electrochem. Soc.

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“…For a certain variable , LTE is defined as where is the exact value if the value at previous time has no error, whereas is the value calculated with the numerical model. From the Taylor series of the exact solution, LTE results (12) To obtain an estimation of the error, it is useful to use a predictor like (13) Now, from the Taylor series of the predicted variable around , the following expression arises (14) Comparing (14) with (12) and neglecting terms of order three and superior, the LTE can be approximated by (15) The LTE value was calculated for free electron and hole and trapped hole densities in each region. Then, the factor was calculated as (16) Finally, according to the value of , the time step is increased, decreased or unchanged.…”

Section: B Numerical Implementationmentioning

confidence: 99%

Numerical Modeling of MOS Dosimeters Under Switched Bias Irradiations

Salomone

Faigon

Redin

2015

IEEE Trans. Nucl. Sci.

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Techniques based on bias switching during the irradiation allow to extend the measurement range of MOS dosimeters. To well predict the response of these sensors under operation conditions it is mandatory to understand the physical phenomena involved. A physics-based numerical model is presented here to reproduce the response of MOS dosimeters under switched bias irradiations. Reported non-monotonic responses after a bias switch were previously explained by the presence of two types of hole traps with different characteristic times. The model presented in this work shows that this behavior can be explained by the spatial charge redistribution using a single trap. The electric field dependences of hole capture and neutralization rates are analyzed and compared with previous experimental results and models in the literature. The spatial distribution of hole traps within the oxide is also analyzed.

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“…According to previous research results, the density of oxide trapped charge is proportional to the radiation dose with a scaling factor of 2/3 if the radiation dose is relatively low [4][5] . Fig.4 can fit the experiment results well enough.…”

Section: Pseudo-mos Total Dose Radiation Experimentsmentioning

confidence: 96%

Total ionizing dose effects on triple-gate FETs

Liu

Cao

et al. 2012

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology

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By radiating different amount of radiation to the pseudo-MOS transistor, the corresponding I-V character -ristic curve can be obtained. Additionally, the density of interface traps and the density of trapped-oxide charges which origin from the buried oxide layer of the SOI material while under radiating can be obtained using the middle band voltage analyze method. The analysis of the accumulation of the trap current in the buried oxide layer and the effect of it can be done using these parameters together with the Altal 3D device simulation software.

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Saturation of radiation-induced threshold-voltage shifts in thin-oxide MOSFETs at 80 K

Cited by 8 publications

References 25 publications

Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators

Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate Insulators

Numerical Modeling of MOS Dosimeters Under Switched Bias Irradiations

Total ionizing dose effects on triple-gate FETs

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