Photonic Integrated Circuit Based on Hybrid III–V/Silicon Integration

Valicourt, G. de; Chang, Chia‐Ming; Eggleston, Michael S.; Melikyan, Argishti; Zhu, Chen; Lee, Jeffrey; Simsarian, J. E.; Chandrasekhar, S.; Sinsky, J.H.; Kim, Kwangwoong W.; Dong, Po; Maho, Anaëlle; Verdier, A.; Brenot, R.; Chen, Y. K.

doi:10.1109/jlt.2017.2776214

Cited by 27 publications

(6 citation statements)

References 20 publications

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“…There are multiple challenges and approaches towards integrating laser sources onto PICs [616]. Among the existing methods are: monolithic integration of lasers using InP-based material platforms, hetero-epitaxial growth of lasers on Si substrates, as well as hybrid integration approaches via micro-transfer-printing, flip-chip, vertical coupling, and lensed coupling, as well as die-to-wafer and wafer-to-wafer bonding, with some approaches schematically shown in figure 43(a) [627]. The challenges for hybrid integration are high alignment accuracy required in case of e.g.…”

Section: Current and Future Challengesmentioning

confidence: 99%

2023 Astrophotonics Roadmap: pathways to realizing multi-functional integrated astrophotonic instruments

Jovanovic,

Gatkine,

Anugu

et al. 2023

J. Phys. Photonics

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Photonic technologies offer numerous functionalities that can be used to realize astrophotonic instruments. The most spectacular example to date is the ESO Gravity instrument at the Very Large Telescope in Chile that combines the light-gathering power of four 8-m telescopes through a complex photonic interferometer. Fully integrated astrophotonic devices offer critical advantages for instrument development, including extreme miniaturization when operating at the diffraction-limit, plus integration, superior thermal and mechanical stabilization owing to the small footprint, and high replicability offering significant cost savings. Numerous astrophotonic technologies have been developed to address shortcomings of conventional instruments to date, including the development of photonic lanterns to convert from multimode inputs to single mode outputs, complex aperiodic fiber Bragg gratings to filter OH emission from the atmosphere, beam combiners enabling long baseline interferometry with for example, ESO Gravity, and laser frequency combs for high precision spectral calibration of spectrometers. Despite these successes, the facility implementation of photonic solutions in astronomical instrumentation is currently limited because of 1) low throughputs from coupling to fibers, coupling fibers to chips, propagation and bend losses, device losses, etc., 2) difficulties with scaling to large channel count devices needed for large bandwidths and high resolutions, and 3) efficient integration of photonics with detectors. In this roadmap, we identify 23 key areas that need further development. We outline the challenges and advances needed across those areas covering design tools, simulation capabilities, fabrication processes, the need for entirely new components, integration and hybridization and the characterization of devices. To realize these advances the astrophotonics community will have to work cooperatively with industrial partners who have more advanced manufacturing capabilities. With the advances described herein, multi-functional integrated instruments will be realized leading to novel observing capabilities for both ground and space based platforms, enabling new scientific studies and discoveries.

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Section: Current and Future Challengesmentioning

confidence: 99%

2023 Astrophotonics Roadmap: pathways to realizing multi-functional integrated astrophotonic instruments

Jovanovic,

Gatkine,

Anugu

et al. 2023

J. Phys. Photonics

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“…Therefore, one of the important technologies based on PICs is the integration of the SiPh PIC with active components using III−V compound semiconductors. [ 10–16 ]…”

Section: Introductionmentioning

confidence: 99%

Laser Characteristic and Strain Distribution Dependence on Embedding Layer Thickness of Quantum Dots Laser Diodes Grown on InP(311)B Substrate

Matsumoto

Akahane

Umezawa

et al. 2021

Physica Status Solidi (a)

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Herein, 14 layer‐stacked quantum dots laser diodes (QD‐LDs) are fabricated with different thicknesses of embedding layers grown on InP(311)B substrate, and the lowest threshold current (Ith) of 21.6 mA is demonstrated in an as‐cleaved ridge‐structured QD‐LD with 13 nm‐thick embedding layers. Ith has the minimum value when the thickness is 13 nm. The factors unique to QDs grown on an InP(311)B substrate are assumed as the overlap integral of the wavefunction of electrons and holes and the decrease in gain owing to the formation of a miniband. According to the simulation results of the local strain profile in the embedding and QD layers, the strain in the QD and embedding layer is higher in the case of 7 nm thickness than in the case of 20 nm thickness. As a result of the large strain, because the thickness of the embedding layer decreases, a large internal electric field tends to be generated, causing the wavefunctions to become largely separated and localized. Therefore, the overlap integral of the wavefunction becomes smaller, and because of the decrease in the radiation recombination probability, the internal quantum efficiency also decreases, causing the characteristic of Ith on the thickness of the embedding layer.

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“…Integration of III-V semiconductors on Si substrate has been widely studied due to the possibility of low cost fabrication using Si substrate and excellent opto-electronic conversion efficiency of III-V material for opto-electronic devices [1]- [3]. A direct growth of III-V materials on a Si substrate in molecular beam epitaxy (MBE) or molecular organic chemical vacuum deposition (MOCVD) and a wafer bonding of III-V materials on a Si substrate are studied for the integration of III-V on Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

et al. 2019

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In this paper, the microcavity effect in quantum dot infrared photodetectors (QDIPs) on a Si substrate, fabricated by means of metal wafer bonding (MWB) and epitaxial lift-off (ELO) processes, was demonstrated by comparing the photocurrent spectrum and the simulated absorption spectrum. Four QDIPs having a different cavity length of 1.7, 2.8, 3, and 3.4 μm were fabricated and compared with simulation based on the finite-difference time-domain method. The resonance peaks were observed in both photocurrent spectrum and absorption spectrum due to the microcavity formed by the bottom mirror of Pt/Au layer and the flat GaAs/air interface. The peak wavelength of the photocurrent spectrum in all four QDIPs on Si samples shows a good agreement with the simulated absorption spectrum. The bias-dependent photocurrent was also measured to study the microcavity effects more in depth. The ratio of the increased photocurrent under bias condition shows higher value in the microcavity QDIPs, showing that the microcavity contributes to generate photocurrent effectively. From these results, we believe that the MWB and ELO could be useful to make the microcavity in many integrated chemical and biosensing application.

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Photonic Integrated Circuit Based on Hybrid III–V/Silicon Integration

Cited by 27 publications

References 20 publications

2023 Astrophotonics Roadmap: pathways to realizing multi-functional integrated astrophotonic instruments

2023 Astrophotonics Roadmap: pathways to realizing multi-functional integrated astrophotonic instruments

Laser Characteristic and Strain Distribution Dependence on Embedding Layer Thickness of Quantum Dots Laser Diodes Grown on InP(311)B Substrate

Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques

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