Photonic integration for high-denisty and multifunctionality in the InP-material system

Robin, F.; Erni, Daniel; Costea, S.; Cristea, Paul Dan; Cui, Xudong; Fedoryshyn, Yuriy; Gini, E.; Hafner, Ch.; Harbers, Rik; Holzman, Jonathan F.; Lohe, H.-J.; Ma, Ping; Rauscher, K.; Scollo, R.; Stark, G. A.; Strasser, Patric; Vogt, W.; Wüest, Robert; Jäckel, H.

doi:10.1117/12.652109

Cited by 4 publications

(1 citation statement)

References 43 publications

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“…Another popular solution is photovoltaic cell with photonics crystal layer working as antireflection coating. The second area of using PhC is integrated optics [4]. Prisms, waveguides, filters can by smaller than ever.…”

Section: Introductionmentioning

confidence: 99%

Characterization of two dimensional photonics structures using optical sccaterometry

Lis

Myśliwiec²,

Miniewicz³

et al. 2008

2008 International Students and Young Scientists Workshop - Photonics and Microsystems

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The technology of photonics structures has being still developed. The main problem, which this technology copy with, is characterization of geometrical parameters in a nano regime. The best method should be quick, easy to use, cheep and precise. Two popular methods such as microscopy AFM or SEM are expansive to maintain and use. Moreover the time of a measurement is long and the inspected area are relatively small. Majority photonic structures are periodic due to optical methods look quite promising. One of them is optical scatterometry which is the angle-resolved measurement and characterization of light scattered from a structure. This technique is able to precisely measure geometrical parameters of structures in the sub-micron size. Additionally scatterometry is quick and non-invasive method.In previous paper has been presented results of using this method to obtain profile one dimensional photonic crystal. In this paper is described the method to measure two dimensional nano-structures and results characterization of two dimensional photonic crystal PhC in photoresist obtained by holographic lithography.

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Section: Introductionmentioning

confidence: 99%

Characterization of two dimensional photonics structures using optical sccaterometry

Lis

Myśliwiec²,

Miniewicz³

et al. 2008

2008 International Students and Young Scientists Workshop - Photonics and Microsystems

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Sidewall roughness measurement inside photonic crystal holes by atomic force microscopy

Strasser¹,

Robin²,

Carlström³

et al. 2007

Nanotechnology

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We present a measurement technique to quantify sidewall roughness inside planar photonic crystal (PhC) holes. Atomic force microscopy is used to scan hole cross-section profiles. By fitting a circle onto each scan line and subtracting this circle from the measurement data, a quantitative value for the deviation from the ideal cylindrical hole shape is extracted. We investigate the sidewall roughness of InP-based PhC holes depending on the nitrogen content of the semiconductor etching plasma. The existence of a trade-off between hole undercut and surface roughness by optimizing the flux of nitrogen during the plasma etching of the PhC holes is confirmed. We further quantify with this technique the influence of the direct-writing of octagons instead of circles by electron-beam lithography on the measured roughness.

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Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP∕InGaAsP

Strasser

Wüest

Robin

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The authors report on the fabrication of photonic crystals in the InP∕InGaAsP∕InP material system for applications at telecommunication wavelengths. To achieve low optical loss, the photonic crystal holes must demonstrate smooth sidewalls and should be simultaneously deep and cylindrical. The authors present the etching process of these structures based on a Cl2∕Ar∕N2 chemistry with an inductively coupled plasma reactive-ion etching system. A systematic analysis is provided on the dependency of the hole sidewall roughness, depth, and shape on the process parameters such as etching power, pressure, and chemical composition of the plasma. They found that a low plasma excitation power and a low physical etching are beneficial for achieving deep holes, whereas for the nitrogen content in the plasma, a delicate balance needs to be found. Nitrogen has a negative impact on the hole shape and surface roughness but is capable of preventing underetching below the mask by passivation of the sidewalls. With the authors’ process more than 4μm deep holes with low conicity have been demonstrated.

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Photonic integration for high-denisty and multifunctionality in the InP-material system

Cited by 4 publications

References 43 publications

Characterization of two dimensional photonics structures using optical sccaterometry

Characterization of two dimensional photonics structures using optical sccaterometry

Sidewall roughness measurement inside photonic crystal holes by atomic force microscopy

Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in InP∕InGaAsP

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