Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF) 2016
DOI: 10.1364/iprsn.2016.itu2a.1
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Photonic Integration on an InP-Membrane

Abstract: Adding photonic functions to silicon electronics has become an important research theme in the last decade. Here we present an approach based on heterogeneously integrating an indium phosphide based membrane on silicon. Within this membrane we realized a range of photonic functions with competitive performances: lasers, fast detectors, waveguides, filters, couplers, modulators etc. This contribution describes the technologies and the results.

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Cited by 4 publications
(4 citation statements)
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“…The fabrication of a CAO-Rx relies on an InP membrane platform which allows for integration of a broad range of photonic components with high efficiency and high speed [29], [30]. Inherited from the generic InP-based platforms [31], [32], the InP membrane platform contains an active-passive InP photonic layer with extra advantages, such as high optical confinement, flexible layer stack and strongly reduced parasitics.…”
Section: A Inp Membrane Photonic Integration Platformmentioning
confidence: 99%
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“…The fabrication of a CAO-Rx relies on an InP membrane platform which allows for integration of a broad range of photonic components with high efficiency and high speed [29], [30]. Inherited from the generic InP-based platforms [31], [32], the InP membrane platform contains an active-passive InP photonic layer with extra advantages, such as high optical confinement, flexible layer stack and strongly reduced parasitics.…”
Section: A Inp Membrane Photonic Integration Platformmentioning
confidence: 99%
“…The small active structure results in very short taper length for power transfer between active and passive waveguides. Together with monolithically integrated passive components [30], such as multimode interference (MMI) couplers and arrayed waveguide gratings (AWG) for WDM, the CAO-Rx with more functions can be realized.…”
Section: A Inp Membrane Photonic Integration Platformmentioning
confidence: 99%
See 1 more Smart Citation
“…An optical link implemented on a III-V/siliconon-insulator (III-V/SOI) platform using an electro-absorption modulator achieved high-speed operation with a 3-dB bandwidth of 13 GHz [16]. A twin-guide laser and a uni-carrier travelling photodiode integrated with InP-membrane circuit were demonstrated [17]. By employing a directly modulated on-chip light source, a reduction of the laser current results in a reduction in the total consumed link energy.…”
Section: Introductionmentioning
confidence: 99%