“…Moreover,t he interfacial and surface ET/PT kinetics of each step should be optimized for high efficiency.Inf act, the quantum yield of water splitting in DSPEC devices is low because the interfacial charger ecombination reactioni sm uch faster than the forwardE T, including the catalytic four-electron oxidation of water to dioxygen. [71] Various methods have been reported for the surfacef unctionalization of nanocrystalline wide-bandgapi norganic semiconductors:c o-adsorption of sensitizers and catalysts, [71][72][73][74][75] adsorptiono fc ovalently tethered sensitizer-catalyst assemblies, [76,77] electropolymerization, [78,79] Nafion-mediated deposition, [80,81] and stepwise deposition methods involving Zr IV ions. [82][83][84] For example, in layer-by-layerd eposition by ligation of Zr IV ions, the time-resolved spectroscopy of zirconium-mediated molecular assembled films showedt hat the back-ET from TiO 2 (e À )tothe WOC or the oxidized photosensitizer on the surface is an order of magnitude slower if assembly takes place in the followingo rder:T iO 2 ,s ensitizer,Z r IV ions, then WOC.…”