Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates

Abstract

The photopumped lasing characteristics of double heterostructures with a BeZnSeTe active layer grown on InP substrates were systematically investigated. Green-to-yellow lasing emissions from 538 to 570 nm were observed at room temperature (RT). The threshold excitation power density (P th) was approximately 30 kW/cm2. From the temperature dependence of P th, stable lasing emissions were obtained up to 353 K. The characteristic temperatures of P th were 106 to 140 K above RT. The relationship between the threshold gain (G th) and the threshold carrier density (N th) was estimated from the cavity length dependence of P th and by waveguide analysis. Using the relationship between G th and N th, the threshold current densities (J th) of electrically pumped BeZnSeTe laser diode structures were calculated to be less than 1.3 kA/cm2. J th decreases as the lasing wavelength increases from 538 to 570 nm. The above results demonstrate that BeZnSeTe is a promising active-layer material for high-performance green-to-yellow LDs.

Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure

“…Blue, green, and red lasing at 497, 540, and 604 nm, respectively, was realized in ZnCdSe/ZnCdMgSe quantum well laser structures grown on InP substrate at optical pumping . Green‐to‐yellow photopumped laser emission from 538 to 570 nm was demonstrated in BeZnSeTe active layer heterostructures grown also on InP . The threshold excitation power density was approximately 30 kW cm −2 .…”

Investigation of p-side contact layers for II–VI compound semiconductor optical devices fabricated on InP substrates by MBE

“…II-VI compound semiconductors such as ZnCdSe, BeZnTe, and BeZnSeTe on InP substrates are very attractive for use in visible-toinfrared optical devices [1][2][3][4][5][6][7][8][9]. Using these materials, we are developing green and yellow laser diodes (LDs) and light-emitting diodes (LEDs) [3][4][5][6][7][8][9].…”

“…Using these materials, we are developing green and yellow laser diodes (LDs) and light-emitting diodes (LEDs) [3][4][5][6][7][8][9]. In the developments, lowering the contact resistance between (especially p-side) contact layers and electrodes is a crucial issue in obtaining high device performances.…”

Investigation of p‐contact layers for BeZnSeTe/MgZnCdSe optical devices on InP substrates

“…Also, for the BeZnSeTe/MgZnCdSe II-VI compound optical devices on InP substrates that we have been developing [1][2][3][4][5][6][7][8], lowresistance contacts are necessary to realize high performances. For II-VI devices, ZnTe and ZnSeTe are promising materials for use as p-contact layers.…”