Photopumped Stimulated Emission from Homoepitaxial GaN Grown on Bulk GaN Prepared by Sublimation Method

Abstract

We have observed stimulated emission at room temperature from a photopumped homoepitaxial GaN for the first time. A homoepitaxial layer was grown by atmospheric metalorganic chemical vapor deposition (MOCVD) on small hexagonal bulk GaN prepared by the sublimation method. The lasing threshold of the pumping power density is 0.86 MW/cm2 and the stimulated emission is polarized with its electric vector perpendicular to the c-axis.

Mechanical properties characterization of c ‐plane (0001) and m ‐plane (10–10) GaN by nanoindentation examination

“…Therefore, the homoepitaxial crystal growth technique is much superior to the heteroepitaxial one [1,2]. Recently, the m-plane (10−10) GaN freestanding substrate has been developed for the purpose of homoepitaxially growing non-polar GaN LD [3].…”

Thick GaN Growth on GaAs(111) Substratres at 1000 °C with HVPE

“…There have been several attempts to grow bulk GaN, such as solution growth under ultra-high nitrogen pressure [3] or sublimation method [4]. However, it is quite difficult to obtain a large-size GaN substrate.…”

The influence of threading dislocation density on Hall effects in free‐standing GaN substrates

“…One of the technical barriers for the applications is relatively high threading dislocation density (TDD) in GaN substrates known as non-radiative centers. In this paper, we analyzed the influence of TDD [5][6][7][8][9][10] for these device applications. But the devices have been fabricated using foreign substrates such as SiC and sapphire because GaN substrates have not been commercially produced.…”

“…Nowadays, a freestanding GaN substrate with low threading dislocation density (TDD) is in large demand for lifetime improvement, process simplification and efficient current spreading in active region of LDs. Several methods have been tried to fabricate bulk GaN crystals such as a sublimation method [5], physical vapor transport(PVT) [6] and solution growth under ultrahigh nitrogen pressure [7], but since the volume of GaN crystal was not satisfying commercial requirements yet, hydride vapor phase epitaxy(HVPE) growing GaN thick film on sapphire or GaAs to obtain a large GaN substrate have been noticed as a promising method firstly launching the commercialisation [8][9][10]. However, there remains a problem even in current HVPE that uses foreign substrates initially.…”