Photoreduction of Ag+ in Ag/Ag2S/Au memristor

Mou, Nurunnahar Islam; Tabib-Azar, Massood

doi:10.1016/j.apsusc.2015.02.038

Cited by 19 publications

(11 citation statements)

References 12 publications

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“…A read disturb is observed after 20,000 cycles at a read voltage of 20 mV and this may be due to small read voltage. The switching time could be reduced after light illumination on Ag/Ag 2 S/Au structure [15]. Figure 6c shows program/erase endurance under programming by light illumination of 10 s and erasing by RESET voltage.…”

Section: Resultsmentioning

confidence: 99%

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Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure

Jana¹,

Chakrabarti²,

Rahaman³

et al. 2015

Nanoscale Res Lett

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It is known that conductive-bridge resistive-random-access-memory (CBRAM) device is very important for future high-density nonvolatile memory as well as logic application. Even though the CBRAM devices using different materials, structures, and switching performance have been reported in Nanoscale Res. Lett., 2015, however, optical switching characteristics by using thermally grown Ge0.2Se0.8 film in Cu/GeSex/W structure are reported for the first time in this study. The Cu/GeSex/W memory devices have low current compliances (CCs) ranging from 1 nA to 500 μA with low voltage of ±1.2 V, high resistance ratio of approximately 103, stable endurance of >200 cycles, and good data retention of >7 × 103 s at 85 °C. Multi-steps of RESET phenomena and evolution of Cu filaments’ shape under CCs ranging from 1 nA to 500 μA have been discussed. Under external white-light illumination with an intensity of 2.68 mW/cm2 (wavelength ranges from 390 to 700 nm), memory device shows optical switching with long read pulse endurance of >105 cycles. This CBRAM device has optically programmed and electrically erased, which can open up a new area of research field for future application.

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Section: Resultsmentioning

confidence: 99%

“…The device is operated under a current of 50 μA. Mou et al [15] have investigated light illumination effect on Ag/Ag 2 S/Au CBRAM device. It has been reported that turn-off voltage decreases from −0.8 to −0.25 V which might be effect of change of reduction potential of Ag ion under external light.…”

Section: Introductionmentioning

confidence: 99%

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure

Jana¹,

Chakrabarti²,

Rahaman³

et al. 2015

Nanoscale Res Lett

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“…Semiconductor-metal heterostructures with multiple components integrate more functionalities and have better performance than those with two components [174][175][176][177][178][179][180][181][182][183][184][185][186][187][188][189][190][191][192][193]. The plasmonic and catalytic metals combined with a semiconductor, such as (CdS-Pt)@Au heterotriangles and Au/XS 2 @Au (X = Mo, Re) heteroparticles, demonstrate considerably improved photocatalytic activities [22,120].…”

Section: Metal-semiconductor Heterostructures With Three Componentsmentioning

confidence: 99%

Controlled growth of plasmonic heterostructures and their applications

Zhong

Chen

et al. 2020

Sci. China Mater.

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Plasmonic nanocrystals with unique properties have been extensively studied in the past decades. A combination of plasmonic materials with other characteristic materials of metals and semiconductors leads to properties far beyond single-component materials and excellent performances in many optical-related applications. In this review, we summarize the recent advances in the controlled growth of plasmonic heterostructures with a specific composition, morphology, size, and structural symmetry. Plasmonenhanced properties of the heterostructures and their excellent performances in applications are also discussed. The synthesis strategies and the intriguing properties of the plasmonic heterostructures provide great opportunity for applications in plasmon-enhanced nonlinear optics, optical spectroscopy, photocatalysis, solar energy conversion, and so on.

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“…Chalcogenides, such as Ag 2 S, Cu 2 S, MoS 2 , WS 2 , Ge 2 Sb 2 Te 5 and AgInSbTe, have received exceptional attention due to their fascinating architectures and interesting physical and electrochemical properties. The efficient drift/diffusion of metal ions (e.g., Ag + and Cu 2+ ) driven by an electric field and/or thermochemical reduction/oxidation account for the excellent memristor properties.…”

Section: Active Materials and Dopantsmentioning

confidence: 99%

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

Wang

Nagai

et al. 2017

Adv Elect Materials

187

124

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Memristors have been intensively studied in recent years as potential building blocks for the construction of versatile neuromorphic architectures. The prevalent developments focus on nanoionic devices due to their ease of reversible regulation, non-volatility, scalability down to the atomic level, low-energy consumption, nanosecond response times, sufficient yield and reliability, as well as their homologous regulatory mechanisms with biological synapses. However, despite their desirable structures and excellent properties, the previously reported properties of nanoionic devices are rather diverse and dissatisfactory for the delivery of reliable analog properties, which is the precondition for the imitation of brain-like functions. Here, the general requirements of neuromorphic engineering in terms of device structure, characterization parameters, synaptic functions and device engineering are introduced. A critical overview of the proposed nanoionic mechanisms for memristive switching is given, focusing particularly on providing fundamental insights into the strategies for regulating the adaptive memristive characteristics of devices that resemble the behaviors of biological synapses, which is an element of neural networks. In addition, the research progress in active materials (e.g., oxides, polymers, small molecules, bio-macromolecules and dopants), especially regarding the correlation among materials, is elaborated and a rational approach to provide insight into new design strategies is considered, and how to understand the memristor mechanisms and further achieve excellent memristive devices is discussed. Finally, the current challenges and several possible future research directions in this area are discussed.

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Photoreduction of Ag+ in Ag/Ag2S/Au memristor

Cited by 19 publications

References 12 publications

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure

Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure

Controlled growth of plasmonic heterostructures and their applications

Nanoionics‐Enabled Memristive Devices: Strategies and Materials for Neuromorphic Applications

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