2020
DOI: 10.1021/acsami.0c04048
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Photoresponse-Bias Modulation of a High-Performance MoS2 Photodetector with a Unique Vertically Stacked 2H-MoS2/1T@2H-MoS2 Structure

Abstract: Monolayer 2H-phase MoS2-based photodetectors exhibit high photon absorption but suffer from low photoresponse, which severely limits their applications in optoelectronic fields. The metallic 1T phase of MoS2, while transporting carriers faster, shows negligible response to visible light, which limits its usage in photodetectors. Herein, we propose an ultrafast-response MoS2-based photodetector having a channel that consists of a 2H-MoS2 sensitizing monolayer on top of 1T@2H-MoS2. The 1T@2H-MoS2 layer has a thi… Show more

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Cited by 98 publications
(50 citation statements)
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“…Molybdenum disulde (MoS 2 ) nanomaterial has a wide scope of application in various elds including photocatalysis, 1-3 electrochemical catalysis, [4][5][6][7] electronic devices, 8,9 optoelectronic devices, 10,11 sensors, 12,13 and environmental pollutant removal, [14][15][16][17] owing to its specic physico-chemical properties, such as relatively large surface area, strong adsorption capacity, adjustable band gap, abundant edge sites and good chemical stability. 18 Compared with crystals, short-range ordered and longrange disordered amorphous materials can offer large active surface areas with more defects and reaction sites.…”
Section: Introductionmentioning
confidence: 99%
“…Molybdenum disulde (MoS 2 ) nanomaterial has a wide scope of application in various elds including photocatalysis, 1-3 electrochemical catalysis, [4][5][6][7] electronic devices, 8,9 optoelectronic devices, 10,11 sensors, 12,13 and environmental pollutant removal, [14][15][16][17] owing to its specic physico-chemical properties, such as relatively large surface area, strong adsorption capacity, adjustable band gap, abundant edge sites and good chemical stability. 18 Compared with crystals, short-range ordered and longrange disordered amorphous materials can offer large active surface areas with more defects and reaction sites.…”
Section: Introductionmentioning
confidence: 99%
“…The characteristic BEs of S 2p 3/2 and S 2p 1/2 at 162.1 and 163.3 eV, respectively, corresponded to the Mo–S bonds in MoS 2 . The BEs of the Mo 3d signal of Mo 3d 5/2 and Mo 3d 3/2 at 229.3 and 232.3 eV, respectively, could be assigned to Mo(IV) in MoS 2 [ 35 ] ( Fig. 2 c).…”
Section: Resultsmentioning
confidence: 99%
“…The BEs for Mo 3d of Mo 3d 5/2 and Mo 3d 3/2 were at 229.3 and 232.3 eV, indexing to the Mo (IV) in MoS 2 (Figure 1n). [44] In addition, the peak at 235.8 eV was attributed to Mo oxides resulting from surface oxidation due to exposure to air. All these results demonstrated the successful synthesis of defective MoS 2 anchored on the CNT branches.…”
Section: Structural Characterizationmentioning
confidence: 99%