In this work, a fully theoretical CMOS active pixel sensor (APS) modulation transfer function model is formulated, evaluated, and compared with practical results. The model is based on a two-dimensional diffusion equation solution and covers the symmetrical photocarriers diffusion effect together with the impact of the pixel active area geometrical shape. Thorough scanning results obtained by means of a unique submicron scanning system (the S-cube system) from various APS chips, implemented in a standard CMOS 0.35-m technology, are compared with our theoretical predictions. The agreement of the presented comparison results indicates that for any potential active area shape, an analytical reliable estimate of image performance is possible.Index Terms-Active pixel sensor (APS), CMOS image sensor, diffusion process, modeling, modulation transfer function (MTF), point spread function (PSF).