1972
DOI: 10.1109/jssc.1972.1050271
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Photosensitivity and characterization of a solid-state integrating photodetector

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Cited by 4 publications
(2 citation statements)
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“…Indeed the charge was transferred from pixel to pixel vertically then horizontally until the sense node located at the chip output . The idea of integrating electronic amplification at the pixel level goes back to the early beginnings of CMOS image sensors [37,38] with 3T pixels. The main advantage of this in-pixel amplification is the separation between the sense node of the pixel and the column level parasitic capacitance.…”
Section: Pixel Architecturesmentioning
confidence: 99%
See 1 more Smart Citation
“…Indeed the charge was transferred from pixel to pixel vertically then horizontally until the sense node located at the chip output . The idea of integrating electronic amplification at the pixel level goes back to the early beginnings of CMOS image sensors [37,38] with 3T pixels. The main advantage of this in-pixel amplification is the separation between the sense node of the pixel and the column level parasitic capacitance.…”
Section: Pixel Architecturesmentioning
confidence: 99%
“…4.15 is used. The in-pixel current noise PSD is expressed as [67] 38) where γ CS reflects the excess noise factor of the common source stage. The noise transfer function relating the drain noise current source to the column-level voltage can be expressed as…”
Section: In-pixel Common Source Based Readout Chainmentioning
confidence: 99%