2008
DOI: 10.1134/s1063784208010258
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Photosensitivity and Schottky barrier height in Au-n-GaAs structures

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Cited by 6 publications
(4 citation statements)
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“…Our sample is Au-n-GaAs structure. We covered the Au-n-GaAs semiconductor structure with a 120-150 Å gold nanolayer by chemical deposition from aqueous solution of HAuCl4 at room temperature (T=27 0 C) [26].…”
Section: 4atomic Force Microscopy Sample Preparationmentioning
confidence: 99%
“…Our sample is Au-n-GaAs structure. We covered the Au-n-GaAs semiconductor structure with a 120-150 Å gold nanolayer by chemical deposition from aqueous solution of HAuCl4 at room temperature (T=27 0 C) [26].…”
Section: 4atomic Force Microscopy Sample Preparationmentioning
confidence: 99%
“…2.5.Scanning electron microscopy sample preparation Our sample is Au-n-GaAs structure. We covered the Au-n-GaAs semiconductor structure with a 120-150 Å gold nanolayer by chemical deposition from aqueous solution of HAuCl4 at room temperature (T=27 0 C) [26].…”
Section: 3dynamic Light Scattering Sample Preparationmentioning
confidence: 99%
“…In this research we have applied the citrate reduction of tetrachloroauric acid in an aqueous medium to obtain colloidal gold nanoparticles. We covered the Au-n-GaAs semiconductor structure with a 120-150 Å gold nanolayer by chemical deposition from HAuCl4 aqueous solution at room temperature (T=27 0 C) [26]. To determine the size and the polydispersity of the nanoparticles we have used dynamic light scattering technique, while to analyze the surface morphology and the sizes of surface gold nanoparticles of Au-n-GaAs structure, which was prepared by the chemical deposition method at low temperature we have used atomic force and scanning electron microscopy techniques.…”
Section: 3scanning Electron Microscopy Techniquementioning
confidence: 99%
“…It is connected with the requirements of modern medicine, biotechnology, ecology, as well as with the problems of "ozone depletion". The most promising devices in this spectral range are Photodetectors based on metal (M) -semiconductor (S) structures with a thin oxide layer (OL) between the semiconductor and the metal [1][2][3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%