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The proposed work reported here constitutes the first investigation of the polarimetric effects in III-V surface-barrier structures of metal-semiconductor (Au-n-GaP x AS1-x , Au-n-GaP) type, illuminated with linearly polarized radiation (LPR) at oblique incidence on the entrance plane (Au). As the angle θ increases the coefficient of photopleochroism increases as P∼θ2. The maximum azimutal photosensitivity of the Au-n-GaP x As1-x (x=0.45–1.0) structures is \varPhiI=0.15–0.20 A/W deg at θ=80° (300 K).

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