Photoswitchable Semiconductor Bismuth Sulfide (Bi₂S₃) Nanowires and Their Self-Supported Nanowire Arrays

Abstract

Self-supported Bi 2 S 3 nanowire arrays with sizes up to several millimeters were prepared by a facile hydrothermal method. In our work, the oriented nanowire arrays were supported on a self-generated nanowire networked substrate. The as-prepared Bi 2 S 3 nanowire exhibited nonlinear current-voltage (I-V) characteristics and excellent photoresponse. It is suggested that the rectifying behavior comes from the Schottky contact between the Bi 2 S 3 nanowire and the Au electrodes. As the light source was switched on and off, the nanowire could be reversibly switched between low and high conductivity, indicating its potential applications in optoelectronic nanodevices.

Effect of Electrical Contact on the Performance of Bi2S3 Single Nanowire Photodetectors

“…This result was also reported previously. [40,41] The reason for the formation of such clear rectifying characteristics needs to be comprehensively identified. Defects, the interface state, and the possibility of an amorphous layer outside the Bi 2 S 3 NW are all parameters that could contribute to the large contact resistance in the AuÀBi 2 S 3 junctions of our MSM photodetectors.…”

A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities

“…Zhai et al [174] pursued a similar thermal evaporation method but with Au nanoparticle catalyst. Others include InP NW PDs [136], NWs of CdTe [175], ultraviolet PDs based on single GaN nanorod p-n junctions [176], InAs/InAsP NWs [177], aligned assemblies of core-shell CdSe/CdS nanorods [178], Ge NW with CdS nanoparticle heterojunction [179], single InP NW devices with back-to-back Schottky barriers [180], Se NWs [181], Ge NW PDs [182], [183], InSb-NW-array PDs [184], CdZnS NW networks [185], metal-semiconductor-metal PDs made from an individual CdS NW [186], Ge NW Schottky PDs [79], [187], Bi 2 S 3 NWs [188], 3-D-to-3-D-transferred Si photoconductor [135], and InP NWs [189].…”

Role of Contact and Contact Modification on Photo-response in a Charge Transfer Complex Single Nanowire Device

“…Nanotubes, nanowires and nanobelts are important one-dimensional (1D) nanomaterials that are the foundation for nanoscience and nanotechnology [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Novel nanoscale optoelectronic devices are important applications of nanomaterials, particularly nanowires which can be scaled down to a single nanowire (NW) device [1][2][3][4][5][6][7][8][9][10][11][12].…”

“…Novel nanoscale optoelectronic devices are important applications of nanomaterials, particularly nanowires which can be scaled down to a single nanowire (NW) device [1][2][3][4][5][6][7][8][9][10][11][12]. Contact electrodes play an important role in improving performance of nanoscale devices [1][2].…”

“…In earlier work, different materials have been used as photoconductive device e.g. MoS 2 [1], Si [3], ZnO [9], Bi 2 S 3 [10], InP [11], CdS [12] etc. It is reported that these material can give substantial photoconductive gain using Schottky contact where they have been used as single nanowire device.…”