Photovoltaic and electrical properties of n-CdS/p-Si heterojunction solar cells

Energy-band alignment of II-VI/Zn3P2 heterojunctions from x-ray photoemission spectroscopy

“…This value is in good agreement with the V D of 640 mV for CdS/Zn 3 P 2 that had been reported by Suda and coworkers. 13 The low attainable barrier height of the CdS/ Zn 3 P 2 heterojunction will therefore limit the maximum efficiency of these types of solar cells. One possible way to manipulate the conduction-band offset between CdS and Zn 3 P 2 is to use a Cd x Zn 1-x S emitter.…”

“…[11][12][13][14][15] The solar energy-conversion efficiencies of these devices to date are less than $2%. Nevertheless, in some cases, the V OC and J SC values surpass those of Mg/Zn 3 P 2 Schottky barriers, suggesting that efficiency enhancements are possible through the use of a heterojunction solar cell design.…”

Photovoltaic properties in CdS/Zn3P2 heterojunctions prepared by ionized evaporation of CdS

“…The CdS film was deposited by electron beam (EB) evaporation in the conventional vacuum system via oil diffusion pump at a -6 backing pressure of 1 x 10 torr. To obtain low-resistive CdS films for the window material of solar cells, indium doping to CdS was carried out by mixing CdS powder (99.99% pure) with In (SO) and sintering at 600°C for 30 2 4 3 min in N ambient [9]. Before the deposition, 2 the CdS powder was pressed into pellets 10 rom in diameter and 5 rom in height.…”

Electrical and Photoelectrical Characteristics of с-Si/Porous–Si/CdS Heterojunctions

“…Thin film p(n)-Si/CdS heterojunctions are promising candidates for use in photovoltaics [1][2][3]. This is due to the fact that the use of wide-gap semiconductors as an optical window in silicon-based heterojunctions to some extent allows minimizing the loss of free charge due to the surface recombination.…”