Photovoltaic properties in CdS/Zn₃P₂ heterojunctions prepared by ionized evaporation of CdS

Reactive Epitaxial Formation of a Mg–P–Zn Ternary Semiconductor in Mg/Zn3P2 Solar Cells

“…The highest conversion efficiency of 6.08% in Zn 3 P 2 -based solar cells was reported by Catalano et al using a “Schottky” junction with metallic Mg . Interestingly, as is not the case for other promising absorbers, the heterojunctions with the binary chalcogenides resulted in lower conversion efficiency than 6.08%. − Catalano et al considered that the Mg/Zn 3 P 2 junction was a Schottky metal/semiconductor contact in the first report, but later on they elucidated the formation of a buried p–n junction as the results of the interdiffusion by the spectral response and the electron beam-induced current measurements. , From the results, they suggested the formation of homo p–n junction in Zn 3 P 2 due to the appearance of n-type conductivity by doping of Mg. In addition, they argued that Mg 3 P 2 was formed at the interface from the Auger electron spectroscopy, secondary ion mass spectroscopy (SIMS), and X-ray photoelectron spectroscopy (XPS) measurements .…”