Photovoltaic effect in transition metal modified polycrystalline BiFeO<sub>3</sub>thin films

Puli, Venkata Sreenivas; Pradhan, Dhiren K.; Katiyar, Rajesh K.; Coondoo, Indrani; Panwar, Neeraj; Misra, Pankaj; Chrisey, Douglas B.; Scott, J. F.; Katiyar, Ram S.

doi:10.1088/0022-3727/47/7/075502

Cited by 56 publications

(33 citation statements)

References 37 publications

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“…In contrast, the big V OC in BSFCO film with illumination, originated from the reduced junction resistance and increased numbers of domain walls, was controlled by the polarization up and down state. 11 The V OC of BLFNO film shown in Fig. 3 was large, compared to those of no-doped polycrystalline BFO films in inset in Fig.…”

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confidence: 89%

“…The V OC was about 0.45 V. It was reported that both electrode/ film interface and ferroelectric polarization could make a certain contribution to PV effect of BFO film. 5,[11][12][13] For this reason, also measured was the contribution of ferroelectric polarization to PV effect. The poled-up and poled-down states were acquired by applying bias voltage of À50 V and 50 V (833 kV/cm) to the top ITO electrode.…”

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confidence: 99%

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Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO₃ film

Peng

Wang

Liu

2015

Funct. Mater. Lett.

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Photovoltaic (PV) effect of polycrystalline Bi 0:975 La 0:025 Fe 0:975 Ni 0:025 O 3 (BLFNO) film grown on Pt(111)/Ti/SiO 2 /Si(001) substrate using sol-gel method has been investigated. The BLFNO film possesses good ferroelectric property and large twice-remanent polarization. It is found that PV response exhibited a strong dependence on the potential of top indium tin oxide (ITO) and bottom Pt electrode. The open circuit voltage is À0.67 V when the potential of ITO electrode is higher than that of Pt electrode and 0.45 V when the potential of ITO electrode is lower than that of Pt electrode. This can be interpreted by the variation of barrier heights at both ITO/BLFNO and BLFNO/Pt interfaces.There had been extensive investigation of microstructural and physical properties of BiFeO 3 (BFO) films because of its predominant multiferroic properties observed in bulk crystals as well as thin film form, providing lots of opportunities for potential application. High quality BFO film could exhibit a much larger polarization of 50-60 μC/cm 2 (see Ref. 1), while the remanent polarization in bulk BFO was only a few μC/cm 2 . One of challenges preventing BFO from large-scale practical applications was the large leakage current density, which had been attributed to the oxygen vacancies and the fluctuation in oxidation state of Fe ions (from Fe 3þ to Fe 2þ ). 2 Great effort had been made to lower the high leakage current density in BFO film, and doping was one of the methods to compensate for the charge of oxygen vacancies and lower the leakage current density. 3,4 Recently, photovoltaic (PV) effect had been reported in pure BFO film 5-8 due to its low visible optical bandgap of $ 2.67 eV. 9 It was reported that the PV response had something to do with the leakage current density to some extent. 10 It was speculated that doping might play a role in the PV effect of BFO film since there was usually a strong correlation among the chemistry, microstructure and physical properties of materials. Recently, Puli et al. reported PV effect of Sm and Co co-doped BFO (BSFCO) film and the open circuit voltage is 0.9 V, 11 which was bigger than that for pure BFO film in previous reports.In this paper, we reported the PV response of the polycrystalline La and Ni co-doped BFO film. Our experimental results also provided the evidence that the PV response of BFO film was closely related to the substitutions.Polycrystalline Bi 0:975 La 0:025 Fe 0:975 Ni 0:025 O 3 (BLFNO) film was directly grown on Pt(111)/Ti/SiO 2 /Si(001) substrate by sol-gel method. The BLFNO precursor of 0.2 mol/kg was coated on the Pt(111)/Ti/SiO 2 /Si(001) substrate and was spinned at 3000 rpm for 30 s. The obtained wet BLFNO film was baked at 240 ○ C in air for 180 s. This process was repeated for 19 times and the final thickness of the BLFNO film was 600 nm. The BLFNO/Pt heterostructure was then annealed in a conventional thermal anneal furnace at 550 ○ C for 20 min in 1 atm flowing N 2 gas to crystallize the BLFNO film. In order to investigate the PV effect of BLFNO fi...

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confidence: 89%

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confidence: 99%

Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO₃ film

Peng

Wang

Liu

2015

Funct. Mater. Lett.

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“…Except for a few cases [47], most cation-doped semiconducting ferroelectric oxide-based devices exhibit energy conversion efficiency under 1% and photocurrent densities on the order of μA cm −2 [45,[48][49][50]. Wang et al [51] demonstrated a new strategy for designing stoichiometric semiconducting perovskite ferroelectric materials.…”

Section: Improvement Of Materials Propertiesmentioning

confidence: 99%

Applications of ferroelectrics in photovoltaic devices

et al. 2016

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Ferroelectric materials exhibiting anomalous photovoltaic properties are one of the foci of photovoltaic research. We review the foundations and recent progress in ferroelectric materials for photovoltaic applications, including the physics of ferroelectricity, nature of ferroelectric thin films, characteristics and underlying mechanism of the ferroelectric photovoltaic effect, solar cells based on ferroelectric materials, and other related topics. These findings have important implications for improving the efficiency of photovoltaic cells.

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“…During the past years, the development of preparation techniques of BFO films, such as pulse laser deposition [6][7][8], radio frequency magnetron sputtering deposition [9][10][11], and chemical solution deposition [2,3,12], provided new data for understanding of physical properties and leakage current mechanisms of BFO films. Many researchers, such as Kharel et al [13], Puli et al [14], Raghavan et al [15], Wang et al [16], Wen et al [17], and Ding et al [18], etc., have reported the effects of transition metal and/or rare earth ion dopants on the structural, magnetic, electrical and photovoltaic properties of BFO films using the above deposition methods. Among these doping elements, Mn is of special interest and attracts much attention due to the complexity of the Mn valance state in different chemical environments.…”

Section: Introductionmentioning

confidence: 99%

Effect of deposition time on multiferroic properties of sputtered Bi0.9La0.1Fe0.9Mn0.1O3 films

Kuang

Tang

Yang

et al. 2015

J Mater Sci: Mater Electron

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Single-phase Bi 0.9 La 0.1 Fe 0.9 Mn 0.1 O 3 (BLFMO) films were successfully deposited on Pt(111)/Ti/SiO 2 / Si(100) substrates by radio frequency magnetron sputtering. The time-dependent structural and multiferroic properties of BLFMO films were examined. The X-ray diffraction patterns and micro-Raman spectra confirmed the formation of pure phase, rhombohedral structure in BLFMO. All the films had highly (012) and (024) preferred orientations. SEM images of BLFMO films exhibited dense and uniform microstructures with grain sizes of approximately 90-100 nm. The data of ferroelectric test indicated that the double remanent polarization (2P r ) value of the BLFMO film with a thickness of 412 nm was 110 lC/cm 2 at an applied electric field of 218 kV/cm. The leakage current density versus electric field curves of BLFMO films indicated that the leakage current decreased monotonically with the increase of sputtering time at a given electric field due to the decrease in total number of free carriers. Magnetism test indicated that the saturation magnetization of BLFMO films was higher when the film thickness was thinner. The results demonstrated that film thickness or deposition time had an effect on multiferroic properties of BLFMO films.

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Photovoltaic effect in transition metal modified polycrystalline BiFeO₃thin films

Cited by 56 publications

References 37 publications

Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO₃ film

Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO₃ film

Applications of ferroelectrics in photovoltaic devices

Effect of deposition time on multiferroic properties of sputtered Bi0.9La0.1Fe0.9Mn0.1O3 films

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Photovoltaic effect in transition metal modified polycrystalline BiFeO3thin films

Cited by 56 publications

References 37 publications

Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO3 film

Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO3 film

Applications of ferroelectrics in photovoltaic devices

Effect of deposition time on multiferroic properties of sputtered Bi0.9La0.1Fe0.9Mn0.1O3 films

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Photovoltaic effect in transition metal modified polycrystalline BiFeO₃thin films

Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO₃ film

Enhanced open circuit voltage in photovoltaic effect of polycrystalline La and Ni co-doped BiFeO₃ film