Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

doi:10.1186/s11671-018-2478-5

Cited by 11 publications

(8 citation statements)

References 42 publications

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“…Owing to its unique optical properties, light-trapping structure plays a more and more important role in photovoltaic devices [1]. At present, researchers have developed all kinds of nanostructures as light-trapping structures to increase light absorption in photovoltaics, while most of them were performed on Si substrate [2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

Zhao

et al. 2021

Nanoscale Res Lett

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GaAs nanostructures have attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate was rarely reported, and most of the preparation processes are complex. Here, we report a black GaAs fabrication process using a simple inductively coupled plasma etching process, with no extra lithography process. The fabricated sample has a low reflectance value, close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

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Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

Zhao

et al. 2021

Nanoscale Res Lett

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“…Semiconductor nanowires (NWs) have shown great potential in low-cost high-performance solar cells [ 1 , 2 , 3 , 4 ]. The unique quasi-one-dimensional NW enables the realization of solar cells with different structures, including axial, radial, or hybrid p–i–n or Schottky junctions aligned vertically or horizontally [ 5 , 6 , 7 , 8 ]. The vertically aligned NW solar cell has been widely reported and a remarkable efficiency of 15.3% has been obtained in an axial p–i–n GaAs NW array solar cell [ 5 ].…”

Section: Introductionmentioning

confidence: 99%

Absorption-Enhanced Ultra-Thin Solar Cells Based on Horizontally Aligned p–i–n Nanowire Arrays

et al. 2020

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A horizontally aligned GaAs p–i–n nanowire array solar cell is proposed and studied via coupled three-dimensional optoelectronic simulations. Benefiting from light-concentrating and light-trapping properties, the horizontal nanowire array yields a remarkable efficiency of 10.8% with a radius of 90 nm and a period of 5 radius, more than twice that of its thin-film counterpart with the same thickness. To further enhance the absorption, the nanowire array is placed on a low-refractive-index MgF2 substrate and capsulated in SiO2, which enables multiple reflection and reabsorption of light due to the refractive index difference between air/SiO2 and SiO2/MgF2. The absorption-enhancement structure increases the absorption over a broad wavelength range, resulting in a maximum conversion efficiency of 18%, 3.7 times higher than that of the thin-film counterpart, which is 3 times larger in GaAs material volume. This work may pave the way for the development of ultra-thin high-efficiency solar cells with very low material cost.

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“…One way to improve the optical absorption is to tailor the structural parameters, including the diameter, diameter/period (D/P) ratio, geometry, and orientation of the NWA [19][20][21][22][23]. Another way is to introduce other nanostructures, such as semiconductor quantum dots (QDs) or metal nanoparticles, to extend the absorption spectrum or to enhance the absorption efficiency [24,25]. These methods typically lead to an absorption enhancement at certain wavelengths, or in a narrow wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Performance Enhancement of Ultra-Thin Nanowire Array Solar Cells by Bottom Reflectivity Engineering

et al. 2020

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A bottom-reflectivity-enhanced ultra-thin nanowire array solar cell is proposed and studied by 3D optoelectronic simulations. By inserting a small-index MgF2 layer between the polymer and substrate, the absorption is significantly improved over a broad wavelength range due to the strong reabsorption of light reflected at the polymer/MgF2 interface. With a 5 nm-thick MgF2 layer, the GaAs nanowire array solar cell with a height of 0.4–1 μm yields a remarkable conversion efficiency ranging from 14% to 15.6%, significantly higher than conventional structures with a much larger height. Moreover, by inserting the MgF2 layer between the substrate and a part of the nanowire, in addition to between the substrate and polymer, the absorption of substrate right below the nanowire is further suppressed, leading to an optimal efficiency of 15.9%, 18%, and 5.4% for 1 μm-high GaAs, InP, and Si nanowire solar cells, respectively. This work provides a simple and universal way to achieve low-cost high-performance nanoscale solar cells.

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Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell

Cited by 11 publications

References 42 publications

Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

Absorption-Enhanced Ultra-Thin Solar Cells Based on Horizontally Aligned p–i–n Nanowire Arrays

Performance Enhancement of Ultra-Thin Nanowire Array Solar Cells by Bottom Reflectivity Engineering

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